S
Santiranjan Shannigrahi
Researcher at Agency for Science, Technology and Research
Publications - 85
Citations - 2482
Santiranjan Shannigrahi is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Dielectric & Ferroelectricity. The author has an hindex of 25, co-authored 85 publications receiving 2122 citations. Previous affiliations of Santiranjan Shannigrahi include Bose Corporation & Sony Broadcast & Professional Research Laboratories.
Papers
More filters
Journal ArticleDOI
Electronic structure and optical properties of orthorhombic and rhombohedral RAlO3 (R = Sm, Nd)
TL;DR: In this article, the electronic structure and optical properties of RAlO 3 (R = Sm, Nd) have been investigated by full potential linearized augmented plane wave method within the framework of density functional theory in its generalized gradient approximation.
Patent
Micromachined electromechanical device
TL;DR: In this article, a back side, a front side opposite to the back side and a periphery portion of the substrate is formed by a pre-existing microstructure on the front side.
Journal ArticleDOI
Characterisation of piezoelectric thin films by areal laser scanning
TL;DR: In this paper, the authors reported the characterization method and results of their ferroelectric lead zirconate titanate (PZT) thin film samples by areal laser scanning and demonstrated that monitoring the vibration of the surface area, rather than a single point as reported previously, could result in much more comprehensive and accurate information about the piezoelectric performance of the films.
Journal ArticleDOI
Electronic structure and electrical properties of Ba2LaTaO6
TL;DR: In this article, the density functional theory calculations implemented in Vienna ab initio simulation package with generalized gradient approximation are performed to obtain the density of states (DOS) and the eigen vectors and eigen frequencies of vibrational modes of Ba2LaTaO6 (BLT) ceramic.
Journal ArticleDOI
Electronic structure, optical dielectric constant and born effective charge of EuAlO3
TL;DR: In this article, the authors used the full potential linearized augmented plane wave method and projector augmented wave method to investigate the ground state properties of EAO and obtained an indirect band gap of 1.8 eV with the valence band maximum at the Γ point and the conduction band minimum at the R point.