S
Santiranjan Shannigrahi
Researcher at Agency for Science, Technology and Research
Publications - 85
Citations - 2482
Santiranjan Shannigrahi is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Dielectric & Ferroelectricity. The author has an hindex of 25, co-authored 85 publications receiving 2122 citations. Previous affiliations of Santiranjan Shannigrahi include Bose Corporation & Sony Broadcast & Professional Research Laboratories.
Papers
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Lead-free perovskite ceramics with ultraviolet-tunable optical and magnetic properties at room temperature
Santiranjan Shannigrahi,Khoong Hong Khoo,Robert Laskowski,Chee Kiang Ivan Tan,Mohit Sharma,Suo Hon Lim,Siao Li Liew +6 more
TL;DR: In this paper, La doped sodium potassium niobate based perovskite (ABO3) ceramics, more specifically [{(1-x)(K0.5Na 0.5)xLa}Nb(1−2x/5)O3] (0.
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Comparison of Grain Structure, Electrical and Magnetic Properties of BaTiO3 and Ni0.5Zn0.5Fe2O4 Ceramics Sintered Using Microwave and Conventional Techniques
TL;DR: In this article, the authors compared the properties of BaTiO3 (BT) and Ni0.5Zn0.4 (NZF) with conventional (CV) and microwave (MW) sintering techniques.
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STRESS ANALYSIS OF (001) PREFERRED ORIENTED BiFeO3 AND Bi(Cr0.03Fe0.97)O3 FILMS
TL;DR: In this paper, a comparative stress analysis of (001)-preferred oriented BiFeO3 and Bi(Cr0.03Fe0.97)O3 (BCF) films formed by the chemical solution deposition method was carried out using high resolution X-ray diffraction (HRXRD), sin2ψ method, micro-Raman and high resolution transmission electron microscopy (HRTEM).
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Publisher's Note: “Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions” [Appl. Phys. Lett. 106, 132901 (2015)]
Ashok Kumar,D. Barrionuevo,Nora Ortega,A. K. Shukla,Santiranjan Shannigrahi,James F. Scott,Ram S. Katiyar +6 more
Patent
Fine processing electro-mechanical element
TL;DR: In this paper, a method and apparatus for manufacturing a piezo-electric film structure for MEMS element that is protected enough from failure and/or contamination in the manufacturing process of the piezoelectric film is presented.