Seokhwan Bang

TL;DR: In this article, the authors examined the electrical and chemical properties of ZnO thin film transistors at various temperatures and showed that the electrical properties of the TFT were enhanced as the processing temperature decreased.

TL;DR: In this article, the effect of H2 plasma treatment on amorphous indium-gallium-zincoxide (a-IGZO) thin-film transistor (TFT) was evaluated under thermal stress.

TL;DR: The improved visible and ultraviolet photocurrent characteristics of a photodetector with the active region using 3-D hierarchical structure against those of 2-D nanosheet structure were achieved and noticeable variations depending on the richness of Zn-OH in each morphology were revealed.

TL;DR: In this article, the controllability of the preferred orientations of ZnO thin films by varying the process temperature and determining the effect of preferred orientation on the electrical properties of the films was investigated.

TL;DR: In this paper, the chemical and electrical properties of ZnO thin film transistors were fabricated and their electrical properties were investigated after the oxygen remote plasma treatment, and they found that the I on/Ioff ratio increased from 73 x 10 4 to 86 × 10 6, the subthreshold swings improved from 167 to 045 V/decade, and the saturation mobility (μ sat ) decreased from 163 to 072 cm 2 /V s as plasma exposure times were increased.