Showing papers by "Shey-Shi Lu published in 2003"
TL;DR: In this article, a GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with 11'dB single-ended conversion gain is demonstrated.
Abstract: A wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with 11 dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP1dB=−17 dBm and IIP3=−7 dBm are achieved for a small local oscillator power of −2 dBm when LO=5.35 GHz and RF=5.7 GHz.
20 citations
09 Feb 2003
TL;DR: In this paper, a 355 /spl mu/m /spl times/ 155 /splmu/m LNA in 0.35 /spl µ/m SiGe BiCMOS uses a simple bias switching technique to operate in all three WLAN bands.
Abstract: A 355 /spl mu/m /spl times/ 155 /spl mu/m LNA in 0.35 /spl mu/m SiGe BiCMOS uses a simple bias switching technique to operate in all three WLAN bands. Noise figure is 2.73 dB at 2 V. Measurements of S parameters, power gain and collector current are also reported.
20 citations
Patent•
26 Nov 2003TL;DR: In this article, the authors proposed a design method and circuits for a multi-band electronic circuit having at least one transistor having an input terminal and an inductor electrically connected to the input terminal of the transistor.
Abstract: The designing method and circuits for a multi-band electronic circuit having at least one transistor have been proposed. The proposed method includes steps of: (a) changing the capacitance between the input terminal and the output terminal of the transistor of the circuit, and (b) obtaining the resonant frequency of the circuit in response to the changed capacitance for switching among multiple bands. The designing method and circuits for a multi-band amplifier, which includes at least one transistor having an input terminal and an inductor electrically connected to the input terminal of the transistor, have been proposed too. The designing method for a multi-band amplifier includes steps of: changing the bias of the transistor, and switching the resonant frequency of the input impedance of the transistor and the inductor in response to the changed bias for switching among multiple bands.
17 citations
TL;DR: Lu et al. as mentioned in this paper extended the dual-feedback circuit methodology for the three-terminal FET model into a more general fourterminal model in order to account for the influence of the substrate resistance.
Abstract: Two different explanations of the S/sub 22/ kink phenomenon in deep-submicrometer RF MOSFETs have been reported: Hjelmgren and Litwin (see IEEE Trans. Electron Devices, vol.48, no.2, p.397-399, 2001) attributed the phenomenon to the substrate resistance, while Lu et al. (see ibid., vol.49, no.2, p.333-340, 2001) concluded that it results from the transconductance, or simply speaking, the size of the transistor. In this paper, we extend the dual-feedback circuit methodology for the three-terminal FET model proposed by Lu et al. into a more general four-terminal model in order to account for the influence of the substrate resistance. Our results show that, for a given MOSFET, either substrate resistance or transconductance may cause a kink in S/sub 22/. In addition to the single kink, which results from the above two factors, the double kinks, which appear when the substrate resistance of a MOSFET is within a middle range (approximately 10/sup 2/ to 10/sup 4/ /spl Omega/), can also be accounted for by our extended model. Experimental data representative of 0.25 /spl mu/m gate MOSFETs are adopted to verify our theory. Excellent agreement between theoretical values and experimental data has been found, which indicates our theory can successfully explain the S/sub 22/ kink phenomenon in deep-submicrometer RF MOSFETs.
14 citations
01 Jan 2003
TL;DR: In this article, a W-band voltage control oscillator (VCO) using 0.1-m AlGaAs/InGaAs /GaAs PHEMT MMIC technology with ultra low phase noise is presented.
Abstract: A W-band voltage control oscillator (VCO) using 0.1- m AlGaAs/InGaAs/GaAs PHEMT MMIC technology with ultra low phase noise is presented. This VCO demonstrated an operation frequency centered at 97 GHz with a tuning range of 2 GHz and an output power of 1 mW. The measured single side-band phase noise is -88 dBc/Hz at 1MHz offset. To the best of our knowledge, this phase noise performance is not only the best among the previously reported results for HEMT MMIC VCO at this frequency, but also rivals those for most VCOs using HBTs.
14 citations
TL;DR: In this paper, the DC and RF characteristics of Ga/sub 0.49/In/Sub 0.85/As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported.
Abstract: The DC and RF characteristics of Ga/sub 0.49/In/sub 0.51/P-In/sub 0.15/Ga/sub 0.85/As enhancement- mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 /spl mu/m and a gate width of 200 /spl mu/m. It is found that the device can be operated with gate voltage up to 1.6 V, which corresponds to a high drain-source current (I/sub DS/) of 340 mA/mm when the drain-source voltage (V/sub DS/) is 4.0 V. The measured maximum transconductance, current gain cut-off frequency, and maximum oscillation frequency are 255.2 mS/mm, 20.6 GHz, and 40 GHz, respectively. When this device is operated at 1.9 GHz under class-AB bias condition, a 14.7-dBm (148.6 mW/mm) saturated power with a power-added efficiency of 50% is achieved when the drain voltage is 3.5 V. The measured F/sub min/ is 0.74 dB under I/sub DS/=15 mA and V/sub DS/=2 V.
13 citations
TL;DR: In this article, the anomalous dip in scattering parameter S/sub 11/ of RF power MOSFETs with drain-to-spacer offset is explained quantitatively for the first time.
Abstract: The anomalous dip in scattering parameter S/sub 11/ of RF power MOSFETs with drain-to-spacer offset is explained quantitatively for the first time. Our results show that, for RF power MOSFETs, the input impedance can be represented by a simple series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies. The appearance of the anomalous dip of S/sub 11/ in a Smith chart is caused by this inherent ambivalent characteristic of the input impedance. It is found that an increase of drain-to-spacer offset enhances the anomalous dip. In addition, the anomalous dip in S/sub 11/ of RF power n-MOSFETs can also be interpreted in terms of poles and zeros.
12 citations
TL;DR: In this article, the effect of drain-to-spacer offset on the kink point of the Smith chart of S22 of RF power MOSFETs was investigated.
Abstract: In this paper, the kink effect in scattering parameter S22 of RF power MOSFETs with drain-to-spacer offset is explained quantitatively for the first time. Our results show that for RF power MOSFETs the output impedance can be represented by a “shifted” series RC circuit at low frequencies and a “shifted” parallel RC circuit at high frequencies. The appearance of the kink point of S22 in a Smith chart is caused by this inherent ambivalent characteristic of the output impedance. It is found that an increase of drain-to-spacer offset enhances the kink effect. In addition, the kink effect in S22 of RF power MOSFETs can also be interpreted in terms of poles and zeros. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 371–376, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10767
10 citations
06 Oct 2003
TL;DR: The kink phenomenon (anomalous dip) of scattering parameters S/sub 11/ and S/ sub 22/ that usually appears in leading-edge RFCMOS devices with sub-130 nm gate-length or RF power CMOS devices is quantitatively analyzed for the first time.
Abstract: In this paper, we propose a new wide-band RF-CMOS model, which includes a complete silicon substrate network. A method to extract every parameter of this model is also developed. Excellent agreement between measurement and simulation up to 40 GHz is achieved for 100 nm and 500 nm CMOS devices under study. In addition, the kink phenomenon (anomalous dip) of scattering parameters S/sub 11/ and S/sub 22/ that usually appears in leading-edge RF CMOS devices with sub-130 nm gate-length or RF power CMOS devices is quantitatively analyzed for the first time.
8 citations
Patent•
03 Oct 2003
TL;DR: In this paper, the authors proposed an impedance matching method based on connecting a capacitor to a collector/drain of a bipolar/field effect transistor having a common-emitter configuration, and obtaining a desired resistance at a base/gate of the transistor due to a feedback effect.
Abstract: The designing methods for an impedance matching are provided which include steps of: connecting in parallel a capacitor to a collector/drain of a bipolar/field effect transistor having a common-emitter configuration, and obtaining a desired resistance at a base/gate of the bipolar/field effect transistor due to a feedback effect for achieving the impedance matching. The circuits for an impedance matching are also provided which include: a first bipolar/field effect transistor, an inductor, a first resistor, a power supply, a capacitor, a second bipolar/field effect transistor, a second resistor, and a third resistor, wherein a desired resistance is produced in the input impedance looking into the base/gate of the first bipolar/field effect transistor through an equivalent parallel combination of an capacitor and an resistor produced at the base/gate of the second bipolar/field effect transistor so as to achieve the impedance matching.
5 citations
TL;DR: A CMOS wideband transimpedance amplifier with multiple‐resistive feedback loops is reported for first time, and the high dynamic range and high linearity achieved were attributed to the multiple feedback technique used.
Abstract: A CMOS wideband transimpedance amplifier with multiple-resistive feedback loops is reported for first time. This amplifier was fabricated by the 0.35-μm CMOS process. Multiple-feedback technique was used to achieve terminal impedance matching and wide bandwidth. The experimental results showed that a transimpedance gain of 51.7 dBΩ and a 3-dB bandwidth of 2.1 GHz were obtained. High input P1dB of −5 dBm and input IP3 of 1 dBm were also measured. The high dynamic range and high linearity achieved were attributed to the multiple feedback technique used. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 60–61, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10670
TL;DR: In this paper, a dual-feedback circuit methodology is adopted to explain the anomalous dips of scattering parameter S22 in deep sub-micrometer MOSFETs.
Abstract: In this paper, a theory based on dual-feedback circuit methodology is adopted to explain the anomalous dips of scattering parameter S22 in deep sub-micrometer MOSFETs. It is found that the output impedance intrinsically behaves as a series RC circuit (for low substrate resistance) or a “shifted” series RC circuit (for very high substrate resistance) at low frequencies, and a parallel RC circuit at high frequencies. This inherent triple characteristic of the output impedance can cause two types of anomalous dips of S22 in a Smith chart. In this way, the two experimental results [1, 2], that is, the anomalous dips caused by high substrate resistance and high trans-conductance (or wide gate-width), can be explained simultaneously for the first time. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 193–200, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10718
08 Jun 2003
TL;DR: In this paper, the size effect on the DC and RF performances of 0.10 /spl mu/m RF MOSFETs for SOC applications was demonstrated. And the authors showed that an increase of device's width (or g/sub m/) enhances the kink effect of scattering parameters S/sub 11/ and s/sub 22/ in a Smith chart is caused by the inherent ambivalent characteristic of the input and output impedances.
Abstract: In this paper, we demonstrate the size effect on the DC and RF performances of 0.10 /spl mu/m RF MOSFETs for SOC applications. Our results show that for RF MOSFETs, the input impedance can be represented by a series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies. In addition, the output impedance can be represented by a "shifted" series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies. The appearance of the kink phenomenon of scattering parameters S/sub 11/ and S/sub 22/ in a Smith chart is caused by this inherent ambivalent characteristic of the input and output impedances. It was found that an increase of device's width (or g/sub m/) enhances the kink effect of S/sub 11/ and S/sub 22/. The present study enables RF engineers to understand the behaviors of S-parameters more deeply, and hence are helpful for them to create a fully scalable CMOS model for SOC applications.
Proceedings Article•
06 Jun 2003TL;DR: In this paper, edge-coupled membrane photonic transmitters without silicon lenses have been demonstrated for all-solid-state terahertz sources with high optical-to-terahertz power conversion efficiency.
Abstract: We demonstrate a novel terahertz photonic transmitter: edge-coupled membrane photonic transmitters without silicon lenses. This device has record high optical-to-terahertz power conversion efficiency. All these factors make an integrated compact all-solid-state terahertz source possible.
TL;DR: In this paper, lattice-matched Ga051In049P/GaAs and strained In02Ga08As doped-channel FETs were investigated in terms of DC and microwave performances, including frequency response, noise figure, power-added efficiency (PAE), and output power.
Abstract: In this paper, lattice-matched Ga051In049P/GaAs and strained Ga051In049P/In02Ga08As doped-channel FETs (DCFETs) were investigated in terms of DC and microwave performances, including frequency response, noise figure, power-added efficiency (PAE), and output power In addition, small-signal and large-signal models were created for designing monolithic microwave integrated circuits (MMICs) The heterostructures were both grown by gas-source molecular beam epitaxy (GSMBE) on semi-insulating (100) GaAs substrates In situ reflection high-energy electron diffraction (RHEED) was used to calibrate the growth rate of InP and GaP Because of the high etching selectivity between Ga051In049P and In02Ga08As/GaAs, the uniformity of the measured electrical properties of our fabricated devices is quite satisfying, which indicates that these Ga051In049P/InxGa1−xAs structures are very suitable for mass production © 2003 Wiley Periodicals, Inc Microwave Opt Technol Lett 39: 56–62, 2003; Published online in Wiley InterScience (wwwintersciencewileycom) DOI 101002/mop11126
27 Oct 2003
27 Oct 2003
TL;DR: In this article, characterization and modeling of the anomalous dip in S/sub 11/ of InGaP/GaAs HBTs is reported and explained quantitatively for the first time.
Abstract: In this paper, characterization and modeling of the anomalous dip in S/sub 11/ of InGaP/GaAs HBTs is reported and explained quantitatively for the first time.
TL;DR: A Ga0.51In0.85As PHEMT with the highest power density among all single-voltage-supply operated devices, to our knowledge, was demonstrated for the first time in this article.
Abstract: A Ga0.51In0.49P/AlGaAs/In0.15Ga0.85As PHEMT with the highest power density among all single-voltage-supply operated devices, to our knowledge, was demonstrated for the first time. Operating at 1.8-GHz under class-A bias conditions, this FET shows 18.84-dBm (382.8 mW/mm) saturated power and 17.25-dBm (265.4 mW/mm) P1dB when the drain voltage is 3.6 V. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 196–199, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11167