An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In systems possessing spatial or dynamical symmetry breaking, Brownian motion combined with unbiased external input signals, deterministic and random alike, can assist directed motion of particles at submicron scales. In such cases, one speaks of ``Brownian motors.'' In this review the constructive role of Brownian motion is exemplified for various physical and technological setups, which are inspired by the cellular molecular machinery: the working principles and characteristics of stylized devices are discussed to show how fluctuations, either thermal or extrinsic, can be used to control diffusive particle transport. Recent experimental demonstrations of this concept are surveyed with particular attention to transport in artificial, i.e., nonbiological, nanopores, lithographic tracks, and optical traps, where single-particle currents were first measured. Much emphasis is given to two- and three-dimensional devices containing many interacting particles of one or more species; for this class of artificial motors, noise rectification results also from the interplay of particle Brownian motion and geometric constraints. Recently, selective control and optimization of the transport of interacting colloidal particles and magnetic vortices have been successfully achieved, thus leading to the new generation of microfluidic and superconducting devices presented here. The field has recently been enriched with impressive experimental achievements in building artificial Brownian motor devices that even operate within the quantum domain by harvesting quantum Brownian motion. Sundry akin topics include activities aimed at noise-assisted shuttling other degrees of freedom such as charge, spin, or even heat and the assembly of chemical synthetic molecular motors. This review ends with a perspective for future pathways and potential new applications.

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Artificial Brownian motors: Controlling transport on the nanoscale

Review of Charged Particle Dynamics. Beam Optics and Focusing Systems Without Space Charge. Linear Beam Optics with Space Charge. Self-Consistent Theory of Beams. Emittance Variation. Beam Physics Research from 1993 to 2007. Appendices. List of Frequently Used Symbols. Bibliography. Index.

Theory and Design of Charged Particle Beams

Magnetic flux can penetrate a type-II superconductor in the form of Abrikosov vortices (also called flux lines, flux tubes, or fluxons) each carrying a quantum of magnetic flux phi 0=h/2e. These tiny vortices of supercurrent tend to arrange themselves in a triangular flux-line lattice (FLL), which is more or less perturbed by material inhomogeneities that pin the flux lines, and in high-Tc superconductors (HTSCs) also by thermal fluctuations. Many properties of the FLL are well described by the phenomenological Ginzburg-Landau theory or by the electromagnetic London theory, which treats the vortex core as a singularity. In Nb alloys and HTSCs the FLL is very soft mainly because of the large magnetic penetration depth lambda . The shear modulus of the FLL is c66~1/ lambda 2, and the tilt modulus c44(k)~(1+k2 lambda 2)-1 is dispersive and becomes very small for short distortion wavelengths 2 pi /k<< lambda . This softness is enhanced further by the pronounced anisotropy and layered structure of HTSCs, which strongly increases the penetration depth for currents along the c axis of these (nearly uniaxial) crystals and may even cause a decoupling of two-dimensional vortex lattices in the Cu-O layers. Thermal fluctuations and softening may `melt` the FLL and cause thermally activated depinning of the flux lines or ofthe two-dimensional `pancake vortices` in the layers. Various phase transitions are predicted for the FLL in layered HTSCs. Although large pinning forces and high critical currents have been achieved, the small depinning energy so far prevents the application of HTSCs as conductors at high temperatures except in cases when the applied current and the surrounding magnetic field are small.

https://iopscience.iop.org/article/10.1088/0034-4885/58/11/003/pdf

The flux-line lattice in superconductors

We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on- and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on-state has a high value of 18 mC m−2, which explains the large on/off ratio. Application of a moderate gate field raises the surface charge to 26 mC m−2, which is of a magnitude that is very difficult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectric–semiconductor interface extends the attainable field-effect band bending in organic semiconductors.

/pdf/high-performance-solution-processed-polymer-ferroelectric-1vukow6fcd.pdf

High-performance solution-processed polymer ferroelectric field-effect transistors

In a system of thin alternating layers of superconductors and insulators the equations describing static and dynamic fluxon solutions are derived. The approach, represented by a useful compact matrix form, is intended to describe systems fabricated for example of niobium or niobium‐nitride thin films; in the limit of ultrathin superconductor films it may give a model for describing fluxon motion in layered high‐Tc superconductors. Numerical examples of current versus voltage curves to be expected in such an experiment are presented.

/pdf/fluxons-in-thin-film-superconductor-insulator-superlattices-3saehen6za.pdf

Fluxons in thin-film superconductor-insulator superlattices

A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retention characteristics were obtained. The drain currents of on- and off-states were measured as a function of time, after /spl plusmn/6 V poling voltage applied to the gate electrode. The current ratio of the on- and off-states was more than 10/sup 6/ even after 12 days. Moreover, after 10/sup 12/ cycles of /spl plusmn/8 V pulses, this ratio was also more than 10/sup 6/.

Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

Thin films of multiferroic (Bi0.6Tb0.3La0.1)FeO3 were grown on Pt∕Ti∕SiO2∕Si substrate under various oxygen pressures by pulsed laser deposition technique. X-ray diffraction patterns show that the crystallinity of the thin film is improved with decreasing depositing oxygen pressure and the thin film grown at a lower oxygen pressure of 0.01torr exhibits a single perovskite phase with preferred (001) orientation. Leakage current of the as-deposited thin films decreases with decreasing grown oxygen pressure. Significantly, the leakage current of the thin films can be reduced largely by an annealing process at 800°C with flowing oxygen. The annealed thin films show a relatively high resistivity and stable polarization loops with double remnant polarization of about 3μC∕cm2. The conduction properties of the thin films have been well analyzed, and it is indicated that the dominant conduction mechanism is the space-charge-limited conduction for the thin film grown at higher oxygen pressure and the Poole-Frenkel ...

Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect

/pdf/dynamic-behavior-of-josephson-coupled-layered-structures-4sb6c4klm5.pdf

Shigeki Sakai

Papers

Fluxons in thin-film superconductor-insulator superlattices

Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect

Dynamic behavior of Josephson-coupled layered structures.

Development of bond-order potentials that can reproduce the elastic constants and melting point of silicon for classical molecular dynamics simulation