S
Shingo Kanamitsu
Researcher at Toshiba
Publications - 36
Citations - 130
Shingo Kanamitsu is an academic researcher from Toshiba. The author has contributed to research in topics: Photomask & Lithography. The author has an hindex of 7, co-authored 35 publications receiving 123 citations.
Papers
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Patent
Photomask repair method and apparatus
Shingo Kanamitsu,Takashi Hirano,Fumiaki Shigemitsu,Motosuke Miyoshi,Kazuyoshi Sugihara,Yuichiro Yamazaki,Makoto Sekine,Takayuki Sakai,Ichiro Mori,Katsuya Okumura +9 more
TL;DR: In this article, the electron beam is set such that the side of the beam is applied in parallel to a borderline between a non-defective pattern and the defect, and a defective portion under an atmosphere of a gas capable of performing chemical etching of a film material forming the photomask pattern.
Proceedings ArticleDOI
Half pitch 14 nm direct pattering with Nanoimprint lithography
Tetsuro Nakasugi,Takuya Kono,Kazuya Fukuhara,Masayuki Hatano,Hiroshi Tokue,Motofumi Komori,Hirotaka Tsuda,T. Komukai,K. Takahata,Hirokazu Kato,Kei Kobayashi,A. Mitra,Sachiko Kobayashi,S. Inoue,Tatsuhiko Higashiki,Takeharu Motokawa,Masanobu Saito,Shingo Kanamitsu,Masamitsu Itoh,T. Imamura,K. Matasunaga,Kohji Hashimoto,Yong-Taik Kim,J. Cho,Wooyung Jung +24 more
TL;DR: In this paper, a nano-print lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering was developed.
Patent
Defect correction method for euv mask
TL;DR: In this article, the authors provided a method for correcting a defect in an EUV mask, the method including: preparing an absorption layer and an anti-reflection layer forming a pattern, recognizing a defect region in the pattern, defining a first region and a second region on the defect region, the second region extending from a desired pattern edge by a given distance, the first region being defined on the rest.
Proceedings ArticleDOI
Prospect of EUV mask repair technology using e-beam tool
TL;DR: In this paper, the same process which is used for MoSi to EUV blank was applied for 20nm pattern and the results of those evaluations were brought the results from those evaluations.
Patent
Method for repairing photo mask, system for repairing photo mask and program for repairing photo mask
TL;DR: In this article, a method for repairing a photo mask is described, including, obtaining a first image being a photo-mask image including a defect area of the photo mask by a repair apparatus, and obtaining a second image being an image of a wafer-printing photo mask including the defect area by an inspection apparatus.