S
Shintaro Sato
Researcher at Fujitsu
Publications - 142
Citations - 2946
Shintaro Sato is an academic researcher from Fujitsu. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 27, co-authored 125 publications receiving 2743 citations. Previous affiliations of Shintaro Sato include National Institute of Advanced Industrial Science and Technology.
Papers
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Journal ArticleDOI
Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition
Haisheng Song,Song-Lin Li,Hisao Miyazaki,Shintaro Sato,Kazuko Hayashi,A. Yamada,N. Yokoyama,Kazuhito Tsukagoshi +7 more
TL;DR: The reasons for the relatively low transport mobility of graphene grown through chemical vapor deposition (CVD-G), which include point defect, surface contamination, and line defect, were analyzed and the effect of grain boundary on transport mobility was qualitatively explained using a potential barrier model.
Journal ArticleDOI
Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects
TL;DR: In this paper, a carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring was developed.
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Self-organization of novel carbon composite structure: Graphene multi-layers combined perpendicularly with aligned carbon nanotubes
TL;DR: In this paper, a novel carbon composite structure consisiting of graphene multi-layers and aligned multi-walled carbon nanotubes (MWNTs) has been discovered, which is expected to have excellent electrical and thermal properties, and therefore is likely to find many applications in electronics.
Proceedings Article
Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells
Mizuhisa Nihei,Daiyu Kondo,Akio Kawabata,Shintaro Sato,Hiroki Shioya,Mamoru Sakaue,Taisuke Iwai,Mari Ohfuti,Yuji Awano +8 more
TL;DR: In this paper, the structure of the interface between MWNTs and Ti bottom contact layers was optimized to obtain a via resistance of 0.7 k/spl Omega/ per MWNT, indicating that most of the inner shells contribute to carrier conduction as an additional channel.
Journal ArticleDOI
Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing
Daisuke Yokoyama,Takayuki Iwasaki,Tsuyoshi Yoshida,Hiroshi Kawarada,Shintaro Sato,Takashi Hyakushima,Mizuhisa Nihei,Yuji Awano +7 more
TL;DR: In this article, the electrical properties of MWCNT-via structures with and without chemical mechanical polishing (CMP) were measured for wiring application, and the improved resistance after annealing at 400°C was 0.6Ω for 2μm vias.