Topological insulators are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi2Te3 and Bi2Se3 crystals. Theoretical models, materials properties, and experimental results on two-dimensional and three-dimensional topological insulators are reviewed, and both the topological band theory and the topological field theory are discussed. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. The theory of topological superconductors is reviewed, in close analogy to the theory of topological insulators.

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Topological insulators and superconductors

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

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Raman spectroscopy as a versatile tool for studying the properties of graphene

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride–cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an “inverted” type at a critical thickness d c . We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin–orbit coupling. So far, the only known three-dimensional topological insulator is BixSb1−x, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Sb2Se3, Bi2Te3 and Bi2Se3. Our calculations predict that Sb2Te3, Bi2Te3 and Bi2Se3 are topological insulators, whereas Sb2Se3 is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the Γ point. In addition, we predict that Bi2Se3 has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials. First-principles calculations predict that Bi2Se3, Bi2Te3 and Sb2Te3 are topological insulators—three-dimensional semiconductors with unusual surface states generated by spin–orbit coupling—whose surface states are described by a single gapless Dirac cone. The calculations further predict that Bi2Se3 has a non-trivial energy gap larger than the energy scale kBT at room temperature.

http://english.iop.cas.cn/rh/rp/200907/U020090713606192151652.pdf

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.

https://arxiv.org/pdf/cond-mat/0308167.pdf

Dissipationless Quantum Spin Current at Room Temperature

Phase transitions between the quantum spin Hall (QSH) and the insulator phases in three dimensions (3D) are studied. We find that in inversion-asymmetric systems there appears a gapless phase between the QSH and insulator phases in 3D which is in contrast with the 2D case. Existence of this gapless phase stems from a topological nature of gapless points (diabolical points) in 3D, but not in 2D.

https://iopscience.iop.org/article/10.1088/1367-2630/9/9/356/pdf

Phase transition between the quantum spin Hall and insulator phases in 3D: emergence of a topological gapless phase

We derive the semiclassical equation of motion for the wave packet of light taking into account the Berry curvature in momentum-space. This equation naturally describes the interplay between orbital and spin angular momenta, i.e., the conservation of the total angular momentum of light. This leads to the shift of wave-packet motion perpendicular to the gradient of the dielectric constant, i.e., the polarization-dependent Hall effect of light. An enhancement of this effect in photonic crystals is also proposed.

Hall effect of light.

We show that the spin-Hall conductivity in insulators is related to a magnetic susceptibility representing the strength of the spin-orbit coupling. We use this relationship as a guiding principle to search real materials showing quantum spin-Hall effect. As a result, we theoretically predict that two-dimensional bismuth will show the quantum spin-Hall effect, both by calculating the helical edge states, and by showing the nontriviality of the ${Z}_{2}$ topological number, and propose possible experiments.

https://arxiv.org/pdf/cond-mat/0607001.pdf

Quantum spin Hall effect and enhanced magnetic response by spin-orbit coupling.

In spatially periodic Hermitian systems, such as electronic systems in crystals, the band structure is described by the band theory in terms of the Bloch wave functions, which reproduce energy levels for large systems with open boundaries. In this paper, we establish a generalized Bloch band theory in one-dimensional spatially periodic tight-binding models. We show how to define the Brillouin zone in non-Hermitian systems. From this Brillouin zone, one can calculate continuum bands, which reproduce the band structure in an open chain. As an example, we apply our theory to the non-Hermitian Su-Schrieffer-Heeger model. We also show the bulk-edge correspondence between the winding number and existence of the topological edge states.

Shuichi Murakami

Papers

Dissipationless Quantum Spin Current at Room Temperature

Phase transition between the quantum spin Hall and insulator phases in 3D: emergence of a topological gapless phase

Hall effect of light.

Quantum spin Hall effect and enhanced magnetic response by spin-orbit coupling.

Non-Bloch Band Theory of Non-Hermitian Systems.