Dissipationless Quantum Spin Current at Room Temperature
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In this article, the authors theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs.Abstract:
Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.read more
Citations
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References
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Journal ArticleDOI
Spintronics: a spin-based electronics vision for the future.
Stuart A. Wolf,Stuart A. Wolf,David D. Awschalom,Robert A. Buhrman,J. M. Daughton,S. von Molnar,Michael L. Roukes,Almadena Chtchelkanova,Daryl Treger +8 more
TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Journal ArticleDOI
Quantal phase factors accompanying adiabatic changes
TL;DR: In this article, it was shown that the Aharonov-Bohm effect can be interpreted as a geometrical phase factor and a general formula for γ(C) was derived in terms of the spectrum and eigen states of the Hamiltonian over a surface spanning C.
Journal ArticleDOI
Quantum computation with quantum dots
TL;DR: In this paper, a universal set of one-and two-quantum-bit gates for quantum computation using the spin states of coupled single-electron quantum dots is proposed, and the desired operations are effected by the gating of the tunneling barrier between neighboring dots.