We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp3 bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and optical transparency. This review will describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of DLCs. The films have widespread applications as protective coatings in areas, such as magnetic storage disks, optical windows and micro-electromechanical devices (MEMs).

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Diamond-like amorphous carbon

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

AlGaN/GaN HEMTs-an overview of device operation and applications

Compact solid-state lamps based on light-emitting diodes (LEDs) are of current technological interest as an alternative to conventional light bulbs The brightest LEDs available so far emit red light and exhibit higher luminous efficiency than fluorescent lamps If this luminous efficiency could be transferred to white LEDs, power consumption would be dramatically reduced, with great economic and ecological consequences But the luminous efficiency of existing white LEDs is still very low, owing to the presence of electrostatic fields within the active layers These fields are generated by the spontaneous and piezoelectric polarization along the [0001] axis of hexagonal group-III nitrides--the commonly used materials for light generation Unfortunately, as this crystallographic orientation corresponds to the natural growth direction of these materials deposited on currently available substrates Here we demonstrate that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency We expect that this approach will pave the way towards highly efficient white LEDs

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Carbon films were deposited using mass‐separated C+ ions of 300 and 600 eV. The films have diamond‐like characteristics such as transparency in the visible spectral region with wavelengths longer than about 650 nm and in the infrared, and high electrical resistivity. Transmission electron diffraction analysis shows that the film is amorphous and does not contain graphitically bonded carbon atoms. Kα x‐ray emission spectrum of the carbon in the film agrees well with that of diamond. In the x‐ray photoemission spectrum of the film, no characteristic energy loss due to π plasmon was observed. The atomic density of the film calculated from the energy loss due to the plasma oscillation of valence electrons is 1.7×1023 atoms/cm3, which is in good agreement with that of diamond. These results indicate that the film deposited using C+ ion beam consists of tetrahedraly bonded carbon atoms.

Preparation and structure of carbon film deposited by a mass‐separated C+ ion beam

Electrical properties of 3C‐SiC layers, epitaxially grown on silicon by chemical vapor deposition, have been investigated at the temperatures between room temperature and 850 °C. In this temperature range, the electron mobility changes with temperature as μH∼T−1.2∼−1.4. The weaker temperature dependence of mobility and the larger mobilities compared with other polytypes of SiC suggest that 3C‐SiC is a promising material for devices operated at high temperatures.

High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition

Schottky barrier contacts have been made on n‐type 3C‐SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C‐SiC, good quality Schottky barrier junctions have been obtained. The barrier height determined by the capacitance measurements is 1.15 (±0.15) eV, while the height by the photoresponse measurements is 1.11 (±0.03) eV. These values are about a half of the energy band gap Eg at room temperature.

Schottky barrier diodes on 3C‐SiC

Amorphous boron carbide (a‐B1−xCx) is believed to have an icosahedron‐based random network. In this paper, vibrational properties of a‐B1−xCx films are studied by IR and Raman spectra, placing particular emphasis on the interpretation of the most prominent 1100‐cm−1 band associated with the B–C bond. The 1100‐cm−1 band appears in both IR and Raman spectra, and the frequency variation and the intensity as a function of the C content are examined, together with evaluation of the absolute absorption coefficients. Within the framework of the impurity‐induced vibration theory, the 1100‐cm−1 band is characterized. The estimation of the force constants by the observed frequencies leads to a conclusion that the vibration can be classified as an extrinsic and preferably a local mode. This vibration is well described as the stretching mode of a localized two‐center bond between the B and C atoms. In this sense, the C atom in amorphous B1−xCx is not regarded as a network constituent. The frequency shift with the C c...

Infrared study of amorphous B1−xCx films

The relation between the conduction‐band discontinuity ΔEc and the Al composition x of refined GaAs/AsxGa1−xAs (x<0.42) heterointerfaces was determined by means of capacitance‐voltage measurements. The resulting relation, ΔEc=0.67ΔEg, is different from Dingle’s rule. The interface charge density σ of a series of the samples was also investigated in relation to the reliability of the determination of ΔEc. It was found that σ less than 1×1011/cm2 is required to determine ΔEc with the precision of ±10 meV.

Shun-ichi Gonda

Papers

Preparation and structure of carbon film deposited by a mass‐separated C+ ion beam

High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition

Schottky barrier diodes on 3C‐SiC

Infrared study of amorphous B1−xCx films

Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements