Shuo Chen

TL;DR: The postannealing to complete the Cu2 ZnSnS4 device significantly enhances the performance of the indium tin oxide and promotes the moderate interdiffusion of elements between the layers in the device, leading to the achievement of a suitable band alignment for carrier transport.

TL;DR: In this article, a self-assembled growth of Sb2Se3 thin films with large crystal grains, benign preferential orientation, and accurate chemical composition were successfully fulfilled under an appropriate thickness of sb precursor and an optimized selenization scenario.

TL;DR: In this article, Sb2Se3 was fabricated by an effective combination reaction of annealing sputtered Sb metallic precursors under Se vapor, which achieved a power conversion efficiency of 6.15%.

TL;DR: In this article , an effective interface engineering approach is reported where the Sb2Se3/CdS heterojunction (HTJ) is subjected to a post-annealing treatment using a rapid thermal process.

TL;DR: In this paper, the authors reported a record high ZT of ~0.65 at 623 K in the n-type Ag/In co-doped CoSb3 thin films, fabricated by a facile magnetron sputtering technique.