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Xinru Li
Researcher at Shenzhen University
Publications - 34
Citations - 1134
Xinru Li is an academic researcher from Shenzhen University. The author has contributed to research in topics: Band gap & Spintronics. The author has an hindex of 14, co-authored 32 publications receiving 726 citations. Previous affiliations of Xinru Li include Shandong University & Technische Universität Darmstadt.
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Graphene/g-C3N4 bilayer: considerable band gap opening and effective band structure engineering.
TL;DR: The research demonstrates that graphene on g-C3N4 with a tunable band gap and high carrier mobility may provide a novel way for fabricating high-performance graphene-based nanodevices.
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Stable Si-based pentagonal monolayers: high carrier mobilities and applications in photocatalytic water splitting
TL;DR: In this article, a Si-based pentagonal monolayers is constructed on the basis of the okayamalite structure by means of first principles calculations, and the carrier mobilities up to 2500 cm2 V−1 s−1 are quantitatively investigated by using deformation potential theory with effective mass approximation.
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Constructing Surface Plasmon Resonance on Bi2WO6 to Boost High-Selective CO2 Reduction for Methane.
TL;DR: In this article, a plasmonic Bi2WO6-V1 exhibits highly selective methane generation with a rate of 995 μmol g-1 h-1 during the CO2 reduction reaction (CO2-RR).
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Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films
Zhuanghao Zheng,Zhuanghao Zheng,Xiaolei Shi,Xiaolei Shi,Dong-Wei Ao,Dong-Wei Ao,Wei-Di Liu,Wei-Di Liu,Yue-Xing Chen,Fu Li,Shuo Chen,Xiao-Qing Tian,Xinru Li,Jing-Yi Duan,Hongli Ma,Xianghua Zhang,Guangxing Liang,Ping Fan,Zhigang Chen,Zhigang Chen +19 more
TL;DR: In this paper, the authors reported a record high ZT of ~0.65 at 623 K in the n-type Ag/In co-doped CoSb3 thin films, fabricated by a facile magnetron sputtering technique.
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Emergence of electric polarity in BiTeX (X = Br and I) monolayers and the giant Rashba spin splitting.
TL;DR: It is predicted that stable BiTeX (X = Br and I) monolayers possess intrinsic large polar electric fields along the normal direction to the plane, making them two-dimensional polar systems and promising for wide applications in nanoelectronics.