Joy S. Lee

TL;DR: In this article, the authors report on atomic layer deposited Hf0.5Zr 0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45μC/cm2) and a low FE saturation voltage (∼1.5V) as extracted from pulse write/read measurements.

TL;DR: In this paper, the effect of the thickness of Hf0.5Zr 0.5O2 (HZO) film on the ferroelectric and dielectric properties using pulse write/read measurements was investigated.

TL;DR: It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration technology.

TL;DR: This work will facilitate the realization of Hf1- XZr XO2-based capacitors for lead-free electrostatic energy storage applications and report on the energy density and energy efficiency of these capacitors.

TL;DR: A novel chlorodisilane precursor, pentachlorodisILane (PCDS, HSi2Cl5), was investigated for the growth of silicon nitride (SiN x) via hollow cathode plasma-enhanced atomic layer deposition (PEALD), and it was suggested that N-H bonds were the dominant hydrogen-containing bonds in the SiN x films without a significant amount of Si-H Bonds originating from the precursor molecules.