S
Soo Seok Kang
Researcher at Korea Institute of Science and Technology
Publications - 21
Citations - 789
Soo Seok Kang is an academic researcher from Korea Institute of Science and Technology. The author has contributed to research in topics: Graphene & Quantum dot. The author has an hindex of 11, co-authored 21 publications receiving 641 citations. Previous affiliations of Soo Seok Kang include Kyung Hee University.
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Journal ArticleDOI
High photoresponsivity in an all-graphene p – n vertical junction photodetector
Chang Oh Kim,Sung Kim,Dong Hee Shin,Soo Seok Kang,Jong Min Kim,Chan Wook Jang,Soong Sin Joo,Jae Sung Lee,Ju Hwan Kim,Suk-Ho Choi,Euyheon Hwang +10 more
TL;DR: High-efficient photodetector behaviours of chemical vapor deposition grown all-graphene p-n vertical-type tunnelling diodes are reported and the photoresponse is almost consistent under 6-month operations.
Journal ArticleDOI
High-performance graphene-quantum-dot photodetectors
Chang Oh Kim,Sung Won Hwang,Sung Kim,Dong Hee Shin,Soo Seok Kang,Jong Min Kim,Chan Wook Jang,Ju Hwan Kim,Kyeong Won Lee,Suk-Ho Choi,Euyheon Hwang +10 more
TL;DR: The observed unique PD characteristics prove to be dominated by the tunneling of charge carriers through the energy states in GQDs, based on bias-dependent variations of the band profiles, resulting in novel dark current and PC behaviors.
Journal ArticleDOI
Size-dependence of Raman scattering from graphene quantum dots: Interplay between shape and thickness
Sung Kim,Dong Hee Shin,Chang Oh Kim,Soo Seok Kang,Soong Sin Joo,Suk-Ho Choi,Sung Won Hwang,Cheolsoo Sone +7 more
TL;DR: In this article, the authors studied the Raman-scattering behavior of GQDs and found that the peak frequencies of D and 2D bands are almost irrespective of d, and the intensity of the D band is larger than that of the G band over almost full range of d.
Journal ArticleDOI
Graphene p–n Vertical Tunneling Diodes
Sung Kim,Dong Hee Shin,Chang Oh Kim,Soo Seok Kang,Jong Min Kim,Chan Wook Jang,Soong Sin Joo,Jae Sung Lee,Ju Hwan Kim,Suk-Ho Choi,Euyheon Hwang +10 more
TL;DR: A new type of graphene p-n junction with asymmetric rectifying behavior showing an on/off ratio of ~10(3) under bias voltages below ±10 V without gating at higher n doping concentrations, which may be useful for practical device applications.
Journal ArticleDOI
Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect
Dong Hee Shin,Sung Kim,Jong Min Kim,Chan Wook Jang,Ju Hwan Kim,Kyeong Won Lee,Jungkil Kim,Si Duck Oh,Dae Hun Lee,Soo Seok Kang,Chang Oh Kim,Suk-Ho Choi,Kyung Joong Kim +12 more
TL;DR: Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time and the photoresponse is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors.