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Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

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TLDR
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time and the photoresponse is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors.
Abstract
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors The photoresponse proves to be dominated by the carriertunneling mechanism

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Citations
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Journal ArticleDOI

Mixed-dimensional van der Waals heterostructures

TL;DR: In this paper, a survey of mixed-dimensional van der Waals (vdw) heterostructures is presented, where 2D materials with non-2D materials adhere primarily through non-covalent interactions.
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The physics and chemistry of graphene-on-surfaces

TL;DR: The major "graphene-on-surface" structures are described and the roles of their properties and related phenomena in governing the overall performance for specific applications including optoelectronics, surface catalysis, anti-friction and superlubricity, and coatings and composites are examined.
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Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors

TL;DR: Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector that combines the electrical and optical contributions of Si QDs to enable a superior performance.
Journal ArticleDOI

Mixed-Dimensional van der Waals Heterostructures

TL;DR: This work presents a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices and highlights the challenges and opportunities for Mixed-dimensional vdW heterostructures.
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Gas sensing with heterostructures based on two-dimensional nanostructured materials: a review

TL;DR: A comprehensive review of recent progress in gas sensors with advanced heterostructures based on 2D nanostructured materials is presented in this paper, where the fundamental sensing mechanisms of different types of gas sensors are systematically discussed, and key device architectures and their performances are summarized.
References
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Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

Graphene-based composite materials

TL;DR: The bottom-up chemical approach of tuning the graphene sheet properties provides a path to a broad new class of graphene-based materials and their use in a variety of applications.
Journal ArticleDOI

Large-scale pattern growth of graphene films for stretchable transparent electrodes

TL;DR: The direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers is reported, and two different methods of patterning the films and transferring them to arbitrary substrates are presented, implying that the quality of graphene grown by chemical vapours is as high as mechanically cleaved graphene.
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Ultrahigh electron mobility in suspended graphene

TL;DR: In this paper, a single layer graphene was suspended ∼150nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching.
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