S
Stas Litski
Researcher at Intel
Publications - 11
Citations - 849
Stas Litski is an academic researcher from Intel. The author has contributed to research in topics: Avalanche photodiode & Silicon photonics. The author has an hindex of 7, co-authored 9 publications receiving 759 citations. Previous affiliations of Stas Litski include Numonyx.
Papers
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Journal ArticleDOI
Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product
Yimin Kang,Han-Din Liu,Han-Din Liu,Mike Morse,Mario J. Paniccia,Moshe Zadka,Stas Litski,Gadi Sarid,Alexandre Pauchard,Ying-Hao Kuo,Hui-Wen Chen,Wissem Sfar Zaoui,John E. Bowers,Andreas Beling,Dion McIntosh,Xiaoguang Zheng,Joe C. Campbell +16 more
TL;DR: In this paper, the authors reported a monolithically grown germanium/silicon avalanche photodetector with a gain-bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of −28 dBm at 10Gb s−1.
Proceedings ArticleDOI
Demonstration of a High Speed 4-Channel Integrated Silicon Photonics WDM Link with Hybrid Silicon Lasers
Andrew Alduino,Ling Liao,Richard Jones,Mike Morse,Brian H. Kim,Wei-Zen Lo,Juthika Basak,Brian R. Koch,Hai-Feng Liu,Haisheng Rong,Matthew N. Sysak,Christine Krause,Rushdy Saba,Dror Lazar,Lior Horwitz,Roi Bar,Stas Litski,Ansheng Liu,Kevin Sullivan,Olufemi I. Dosunmu,Neil Na,Tao Yin,Frederick Haubensack,I-Wei Hsieh,John Heck,Robert Beatty,Hyundai Park,Jock Bovington,Simon S. Lee,Hat Nguyen,Hinmeng Au,Katie Nguyen,Priya Merani,Mahtab Hakami,Mario J. Paniccia +34 more
TL;DR: In this paper, a 4λ×10Gbps CWDM link integrating optical components, electronics and packaging technologies required for system integration is reported, and further demonstration of the link operating at 50Gbps and 4λ × 12.5Gbps, respectively, is shown.
Journal ArticleDOI
Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 μm light detection
Yimin Kang,Moshe Zadka,Stas Litski,Gadi Sarid,Michael T. Morse,Mario J. Paniccia,Y. H. Kuo,John E. Bowers,Andreas Beling,Han-Din Liu,D. C. McIntosh,Joe C. Campbell,Alexandre Pauchard +12 more
TL;DR: In this article, the mesa-type photodiodes exhibit a responsivity at 1310nm of 0.54A/W, a breakdown voltage thermal coefficient of 1.05%/°C, a 3dBbandwidth of 10GHz, and gain-bandwidth product was measured as 153GHz.
Journal ArticleDOI
Integrated silicon photonics for optical networks [Invited]
Assia Barkai,Yoel Chetrit,Oded Cohen,Rami Cohen,Nomi Elek,Eyal Ginsburg,Stas Litski,Albert Michaeli,Omri Raday,Doron Rubin,Gadi Sarid,Nahum Izhaky,Mike Morse,Olufemi I. Dosunmu,Ansheng Liu,Ling Liao,Haisheng Rong,Ying-Hao Kuo,Shengbo Xu,Drew Alduino,Jeffrey Tseng,Hai-Feng Liu,Mario J. Paniccia +22 more
TL;DR: This paper reviews silicon photonics technology at Intel, showing how using the same mature, low-cost silicon CMOS technology the authors develop many of the building blocks required in current and future optical networks.
Proceedings ArticleDOI
A 4×12.5 Gb/s CWDM Si photonics link using integrated hybrid silicon lasers
Brian R. Koch,Andrew Alduino,Ling Liao,Richard Jones,Mike Morse,Brian H. Kim,Wei-Zen Lo,Juthika Basak,Hai-Feng Liu,Haisheng Rong,Mathew N. Sysak,Christine Krause,Rushdy Saba,Dror Lazar,Lior Horwitz,Roi Bar,Stas Litski,Ansheng Liu,Kevin Sullivan,Olufemi I. Dosunmu,Neal Na,Tao Yin,Frederic Haubensack,I-Wei Hsieh,John Heck,Robert Beatty,Jock Bovington,Mario J. Paniccia +27 more
TL;DR: In this article, the authors demonstrate a 4λx12.5Gbps Silicon Photonics CWDM link integrating all optical components, electronics, and packaging technologies required to form the link.