Y
Yimin Kang
Researcher at Intel
Publications - 59
Citations - 1490
Yimin Kang is an academic researcher from Intel. The author has contributed to research in topics: Avalanche photodiode & Dark current. The author has an hindex of 17, co-authored 59 publications receiving 1340 citations. Previous affiliations of Yimin Kang include University of California, San Diego.
Papers
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Journal ArticleDOI
Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product
Yimin Kang,Han-Din Liu,Han-Din Liu,Mike Morse,Mario J. Paniccia,Moshe Zadka,Stas Litski,Gadi Sarid,Alexandre Pauchard,Ying-Hao Kuo,Hui-Wen Chen,Wissem Sfar Zaoui,John E. Bowers,Andreas Beling,Dion McIntosh,Xiaoguang Zheng,Joe C. Campbell +16 more
TL;DR: In this paper, the authors reported a monolithically grown germanium/silicon avalanche photodetector with a gain-bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of −28 dBm at 10Gb s−1.
Journal ArticleDOI
Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection
TL;DR: In this article, a physical model that quantitatively describes the behavior of the dark count probability and single-photon quantum efficiency of avalanche diodes under conditions that allow these devices to be used for singlephoton detection was proposed.
Journal ArticleDOI
Fused InGaAs-Si avalanche photodiodes with low-noise performances
Yimin Kang,P. Mages,A. R. Clawson,Paul K. L. Yu,M. Bitter,Z. Pan,Alexandre Pauchard,Steven G. Hummel,Yu-Hwa Lo +8 more
TL;DR: In this paper, a fused InGaAs-Si avalanche photodiode with a low excess noise factor of 2.3 at a gain of 20 was reported, which corresponds to a k factor of 0.02 for the silicon avalanche region.
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Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.
Wissem Sfar Zaoui,Hui-Wen Chen,John E. Bowers,Yimin Kang,Mike Morse,Mario J. Paniccia,Alexandre Pauchard,Joe C. Campbell +7 more
TL;DR: The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
Journal ArticleDOI
Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 μm light detection
Yimin Kang,Moshe Zadka,Stas Litski,Gadi Sarid,Michael T. Morse,Mario J. Paniccia,Y. H. Kuo,John E. Bowers,Andreas Beling,Han-Din Liu,D. C. McIntosh,Joe C. Campbell,Alexandre Pauchard +12 more
TL;DR: In this article, the mesa-type photodiodes exhibit a responsivity at 1310nm of 0.54A/W, a breakdown voltage thermal coefficient of 1.05%/°C, a 3dBbandwidth of 10GHz, and gain-bandwidth product was measured as 153GHz.