S
Steffen Lehmann
Researcher at GlobalFoundries
Publications - 17
Citations - 178
Steffen Lehmann is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Transconductance & Silicon on insulator. The author has an hindex of 4, co-authored 17 publications receiving 80 citations.
Papers
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Proceedings ArticleDOI
A 22nm FDSOI Technology Optimized for RF/mmWave Applications
S.N. Ong,Steffen Lehmann,W.H. Chow,Chi Zhang,Christian Schippel,L.H.K. Chan,Yogadissen Andee,M. Hauschildt,K.K.S. Tan,Josef S. Watts,C.K. Lim,A. Divay,Jen Shuang Wong,Zhixing Zhao,Madabusi Govindarajan,Christoph Schwan,Andreas Huschka,A. Bcllaouar,W. LOo,J. Mazurier,Carsten Grass,R. Taylor,Kok Wai Johnny Chew,S. Embabi,G. Workman,A. Pakfar,S. Morvan,Kumaran Sundaram,M. T. Lau,B. Rice,David Harame +30 more
TL;DR: This paper describes a 22nm FDSOI technology optimized for RF/mmWave applications that consists of high speed mmWave FET transistors, and a thick dual copper back-end that is extremely simple with less than 40 masks for an 8M process.
Proceedings ArticleDOI
RF-pFET in fully depleted SOI demonstrates 420 GHz F T
Josef S. Watts,Kumaran Sundaram,Kok Wai Johnny Chew,Steffen Lehmann,S.N. Ong,W.H. Chow,Lye Hock Chan,J. Mazurier,Christoph Schwan,Yogadissen Andee,Thomas Feudel,L. Pirro,Elke Erben,Edward J. Nowak,Elliot John Smith,El Mehdi Bazizi,Thorsten Kammler,R. Taylor,Bryan Rice,David Harame +19 more
TL;DR: In this paper, the authors reported an experimental pFET with 420GHz f T, which to the best of their knowledge is the highest value reported for a silicon PFET, and the transconductance is 1800uS/um.
Journal ArticleDOI
Empirical Large-Signal Modeling of mm-Wave FDSOI CMOS Based on Angelov Model
TL;DR: In this article, the authors present a systematic empirical modeling approach in fully depleted silicon-on-insulator (FDSOI) CMOS for large-signal simulation in power amplifier applications.
Proceedings ArticleDOI
22FDX ® f MAX Optimization through Parasitics Reduction and GM Boost
Zhixing Zhao,Patrick James Artz,Klaus Hempel,Juergen Faul,Tianbing Chen,R. Taylor,J. Mazurier,Carsten Grass,Jan Hoentschel,David Harame,Steffen Lehmann,Luca Lucci,Yogadissen Andee,Alexis Divay,L. Pirro,Tom Herrmann,Alban Zaka,Ricardo Sousa +17 more
TL;DR: Three methods of reducing device gate resistance and parasitic capacitance while boosting transconductance of MOSFET on 22FDX® are proposed and the fMAX can be improved by 50% and up to 75% for NFET and PFET with respect to a standard 2.0µm finger width layout.
Proceedings ArticleDOI
DC-110 GHz Characterization of 22FDX ® FDSOI Transistors for 5G Transmitter Front-End
TL;DR: The measured output power and efficiency indicate that the DUTs perform well in the sub-6 GHz band and even in K-band and the applicability and suitability of the 22FDX® FDSOI technology platform for 5G low-power transmitters is emphasized.