T
Tom Herrmann
Researcher at GlobalFoundries
Publications - 56
Citations - 406
Tom Herrmann is an academic researcher from GlobalFoundries. The author has contributed to research in topics: MOSFET & Transistor. The author has an hindex of 8, co-authored 50 publications receiving 329 citations.
Papers
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Journal ArticleDOI
From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$ -Based FeFET Devices
Stefan Mueller,Johannes Müller,R. Hoffmann,Ekaterina Yurchuk,Till Schlösser,Roman Boschke,Jan Paul,Matthias Goldbach,Tom Herrmann,Alban Zaka,Uwe Schroder,Thomas Mikolajick +11 more
TL;DR: Ferroelectric Si:HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitors over metal ferroelectric insulator-semiconductor (MFIS) and finally ferro electric field effect transistor (FeFET) devices as mentioned in this paper.
Journal ArticleDOI
Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET
Stefan Flachowsky,Andy Wei,Ralf Illgen,Tom Herrmann,Jan Höntschel,Manfred Horstmann,W. Klix,R. Stenzel +7 more
TL;DR: In this paper, applied electrical fields are used to experimentally study different state-of-the-art local and global strain techniques and reveal the different responses of n- and p-MOSFETs to the different strain techniques.
Patent
Integrated circuits having protruding source and drain regions and methods for forming integrated circuits
TL;DR: In this paper, the authors describe a gate structure overlying and transverse to one or more fins that are delineated by trenches formed in a semiconductor substrate, and the trenches are filled with an insulating material between the protruding portions and the gate structures.
Proceedings ArticleDOI
Performance investigation and optimization of Si:HfO 2 FeFETs on a 28 nm bulk technology
Stefan Mueller,Ekaterina Yurchuk,Stefan Slesazeck,Thomas Mikolajick,Johannes Müller,Tom Herrmann,Alban Zaka +6 more
TL;DR: In this article, the thickness dependence of ferroelectric Si:HfO2 (10 nm and 30 nm) was studied with a focus on Ferroelectric field effect transistor (FeFET) memory applications based on 28 nm bulk technology.
Patent
Strain Engineering in Three-Dimensional Transistors Based on Strained Isolation Material
TL;DR: In this paper, a strain-inducing isolation material is provided, at least in the drain and source areas, thereby inducing a strain, in particular at and in the vicinity of the PN junctions of the three-dimensional transistor.