Steve Wolfley

TL;DR: Insight is provided into the role of electrodes on the performance of hafnium oxide-based ferroelectrics, mechanisms driving wake-up and fatigue, and a non-destructive means to characterize the phase changes accompanying polarization instabilities are demonstrated.

TL;DR: In this paper, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus x-ray diffraction (XRD) measurements.

TL;DR: In this article, the authors investigated and modeled the dc behavior of thin-film-based switching devices, which are based on sputtered vanadium dioxide thin films that transition from 200 kΩ/□ at room temperature to 390 Ω/µ at temperatures above 68°C, with the transition occurring over a narrow temperature range.

TL;DR: In this article, the suppression of room temperature oxidation of DC sputtered niobium films and the effects upon the superconductive transition temperature, Tc, was reported. But the results were limited to the top 6-10nm of the Niobium wafers.

TL;DR: In this paper, the room temperature sheet resistance of NbN bulk oxidation was identified and confirmed by secondary ion mass spectrometry, and Meissner magnetic measurements confirmed the bulk oxidation not observed with simple cryogenic resistivity measurements.