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Steven A. Boggs

Researcher at University of Connecticut

Publications -  225
Citations -  5312

Steven A. Boggs is an academic researcher from University of Connecticut. The author has contributed to research in topics: Dielectric & Field (physics). The author has an hindex of 38, co-authored 225 publications receiving 4829 citations. Previous affiliations of Steven A. Boggs include Hydro One & University of Toronto.

Papers
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Rational design of all organic polymer dielectrics

TL;DR: A strategy of hierarchical modelling with successive downselection stages to accelerate the identification of polymer dielectrics that have the potential to surpass 'standard' materials for a given application is proposed.
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Historical introduction to capacitor technology

TL;DR: The most important capacitor technologies are impregnated foil-polymer film (for high voltage, high current), metalized film, ceramic, electrolytic, and electric double layer, although metalized paper is still used occasionally in "soggy foil" designs as mentioned in this paper.
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Fundamental Limitations in the Measurement of Corona and Partial Discharge

TL;DR: In this article, the theoretical sensitivity of conventional partial discharge detectors is compared with that obtained from ultra wideband (UWB) (up to l GHz) detection systems, and the comparison indicates that for relatively lossfree distributed systems, such as SF6 insulated bus, the UWB system is up to two orders of magnitude more sensitive.
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Partial discharge: overview and signal generation

TL;DR: In this article, it is shown how a partial discharge (PD) within a test sample generates a signal that can be measured outside the apparatus under test, and the fundamentals of how the phenomenon generates a current in the external circuit are explained.
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Effect of Insulation Properties on the Field Grading of Solid Dielectric DC Cable

TL;DR: In this paper, the authors demonstrate the effect of temperature and electric field on the field grading of resistively graded dielectric dc cable for the range of measured material properties and provide an analytical approximation for computing the field of resistive dielectrics.