S
Suchismita Ghosh
Researcher at University of California, Riverside
Publications - 16
Citations - 16127
Suchismita Ghosh is an academic researcher from University of California, Riverside. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 8, co-authored 13 publications receiving 14425 citations.
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Journal ArticleDOI
Superior Thermal Conductivity of Single-Layer Graphene
Alexander A. Balandin,Suchismita Ghosh,Wenzhong Bao,Irene Calizo,Desalegne Teweldebrhan,Feng Miao,Chun Ning Lau +6 more
TL;DR: The extremely high value of the thermal conductivity suggests that graphene can outperform carbon nanotubes in heat conduction and establishes graphene as an excellent material for thermal management.
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Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits
Suchismita Ghosh,Irene Calizo,Desalegne Teweldebrhan,Evghenii P. Pokatilov,Denis L. Nika,Alexander A. Balandin,Wenzhong Bao,Feng Miao,Chun Ning Lau +8 more
TL;DR: In this paper, the thermal conductivity of graphene suspended across trenches in Si∕SiO2 wafer was investigated using a noncontact technique based on micro-Raman spectroscopy.
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Dimensional crossover of thermal transport in few-layer graphene
Suchismita Ghosh,Wenzhong Bao,Denis L. Nika,Samia Subrina,Evghenii P. Pokatilov,Chun Ning Lau,Alexander A. Balandin +6 more
TL;DR: The observed evolution from two dimensions to bulk is explained by the cross-plane coupling of the low-energy phonons and changes in the phonon Umklapp scattering, shedding light on heat conduction in low-dimensional materials and may open up FLG applications in thermal management of nanoelectronics.
Journal ArticleDOI
Dimensional crossover of thermal transport in few-layer graphene materials
Suchismita Ghosh,Wenzhong Bao,Denis L. Nika,Samia Subrina,Evghenii P. Pokatilov,Chun Ning Lau,Alexander A. Balandin +6 more
TL;DR: In this paper, the authors show that the room-temperature thermal conductivity changes from K~3000 W/mK to 1500 W /mK as the number of atomic plains in few-layer graphene increases from 2 to 4.
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Raman nanometrology of graphene: Temperature and substrate effects
TL;DR: In this paper, the effects of substrate and temperature on Raman signatures of graphene were investigated on GaAs, glass, sapphire, standard Si/SiO2 substrates, and suspended across trenches in Si/ SiO2 wafers.