Sunao Aya

TL;DR: In this paper, the authors developed a new atomic force microscope with differential laser interferometers (DLI-AFM), carried out test measurements of the prototype 1D-grating standards with pitches of 100, 80, 60 and 50 nm using the DLI-AAFM and evaluated the uncertainty in the pitch measurements.

TL;DR: In this paper, Ni-Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells, and the magnetic states were measured with magnetic force microscopy.

TL;DR: In this paper, an improved function was proposed to express the deposited energy intensity distribution for fine patterns or that for heavy metals such as X-ray absorbers, and an experimental method was also proposed for obtaining the function parameters, and the optimal parameters were obtained for Si and W-Ti substrates at acceleration voltage of 25 kV.

TL;DR: In this paper, the Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric round shapes.

TL;DR: In this article, a semiconductor device capable of suppressing time variation of a threshold voltage and a method of manufacturing the same is presented, which comprises a drift layer formed on a polysilicon substrate, first well regions formed in a surface layer of the drift layer, being apart from one another, a gate insulating film formed, extending on the drift layers and each of the first well region, a gated electrode selectively formed on the gate's surface, a source contact hole penetrating through the gate-insulating film and reaching the inside of each well regions, and a residual