S
Susumu Saito
Researcher at Tokyo Institute of Technology
Publications - 129
Citations - 3680
Susumu Saito is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Carbon nanotube & Electronic structure. The author has an hindex of 30, co-authored 128 publications receiving 3429 citations. Previous affiliations of Susumu Saito include University of California, Berkeley & NEC.
Papers
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Journal ArticleDOI
Energetics and electronic structures of pyridine-type defects in nitrogen-doped carbon nanotubes
Yoshitaka Fujimoto,Susumu Saito +1 more
TL;DR: In this paper, the pyridine-type defects in the nitrogen-doped carbon nanotubes (CNTs) were investigated using first-principles density-functional calculations.
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Electronic and geometric structures of C76 and C84.
TL;DR: In this paper, the electronic and geometric structures of four main candidates for C 84 obtained by using quantitatively reliable models were reported by using a comparison to the recent photoemission spectra (PES).
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Band engineering and relative stabilities of hexagonal boron nitride bilayers under biaxial strain
Yoshitaka Fujimoto,Susumu Saito +1 more
TL;DR: In this paper, the authors performed first-principles total energy calculations to investigate stabilities and electronic properties of hexagonal boron nitride bilayers under biaxial tensile strains.
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Semiconducting form of the first-row elements: C60 chain encapsulated in BN nanotubes
TL;DR: In this article, total energy electronic structure calculations for encapsulation of nanotubes consisting of boron and nitrogen atoms and resulting "BNC peapods" are presented.
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Electronic structures of hexagonal boron-nitride monolayer: strain-induced effects
TL;DR: In this article, the dispersion of the energy bands and the width of the band gaps are calculated under biaxial strains for hexagonal boron nitride (h-BN) monolayers.