S
Susumu Saito
Researcher at Tokyo Institute of Technology
Publications - 129
Citations - 3680
Susumu Saito is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Carbon nanotube & Electronic structure. The author has an hindex of 30, co-authored 128 publications receiving 3429 citations. Previous affiliations of Susumu Saito include University of California, Berkeley & NEC.
Papers
More filters
Journal ArticleDOI
Prediction of electronic properties of carbon-based nanostructures
TL;DR: In this article, the authors present first-principles total energy calculations that allow them to predict two new properties of carbon-based nanostructures, namely, carbon peapods and carbon nanoflakes with zigzag edges.
Journal ArticleDOI
Lattice matching and electronic structure of finite-layer graphene/ h -BN thin films
TL;DR: In this paper, the interlayer interaction energy of lattice-mismatched thin films with four or more layers was analyzed and the maximum value of the band gap of the lattice matched thin films having the same layer number, but different stacking sequences, decreases with respect to the layer number.
Journal ArticleDOI
Gas adsorption, energetics and electronic properties of boron- and nitrogen-doped bilayer graphenes
Yoshitaka Fujimoto,Susumu Saito +1 more
TL;DR: In this article, the authors studied the properties of several environmental polluting or toxic gas molecules (CO, CO2, NO and NO2) adsorbed on B and N atoms in bilayer graphene using first-principles electronic-structure calculations.
Journal ArticleDOI
Electronic Configurations of Superheavy Elements
Koichiro Umemoto,Susumu Saito +1 more
TL;DR: In this paper, the relativistic density functional theory with quantum electrodynamical corrections (Breit interaction) was used to study electronic configurations of superheavy elements around one of islands of stabilities.
Journal ArticleDOI
Interlayer distances and band-gap tuning of hexagonal boron-nitride bilayers
Yoshitaka Fujimoto,Susumu Saito +1 more
TL;DR: In this article, the energy-band structures and band-gap values of hexagonal boron-nitride bilayers were calculated under uniaxial compressive strains along the direction perpendicular to the bilayer sheets.