Wavelength-division-multiplexing (WDM) technology is now recognized as one of the key technologies in optical communications systems. This is because it has great potential to enhance system design and flexibility. This paper reviews state-of-the-art optical multi/demultiplexers (MUX/DEMUX) and WDM system design. Various system applications are also summarized.

Review and status of wavelength-division-multiplexing technology and its application

The advantages and problems of using wavelength division multiplexing (WDM) to transmit byte-wide data in parallel through a single-mode optical fiber are studied. The principle problem which is particular to byte-wide transmission is shown to be bit skew caused by group delays of the different transmission wavelengths. The aggregate bit rate of the byte-wide link is shown to be equal to the aggregate bit rate of the serial link for all byte sizes. >

High-speed data transmission on an optical fiber using a byte-wide WDM system

The paper suggests a simple method for the design of a recent hybrid adaptive control scheme by using adaptive sampling techniques so as to improve the adaptation transients. Some extensions which consider a parametric adaptation law involving a dead zone to achieve signal boundedness in the presence of bounded disturbances are also given.

Adaptive sampling for improving the adaptation transients in hybrid adaptive control

A laser transistor functions both as a semiconductor laser and a heterojunction bipolar transistor. It generates stimulated emission light from the base region. We have obtained, typically, a maximum laser power of 3 mW, a current gain of 2000, and a transition frequency of 2.5 GHz for the fabricated devices. We show that the novel light output control can be obtained by changing its collector voltage. Both laser output and collector current can also be simultaneously controlled by changing the base current.

Operation principle of the InGaAsP/InP laser transistor

Par utilisation d'un prisme electrooptique et d'interferometres a couches guidantes, on calcule le coefficient electrooptique d'un guide d'onde en metaniobate de lithium a partir de la deflexion d'un faisceau gaussien lateral et de la mesure du decalage de phase, cause par l'application d'un champ electrique externe sur la structure

Electrooptic behaviour of proton exchanged LiNbO3 optical waveguides

The first successful dual wavelength lasers emitting at 12 μm and 13 μm wavelengths are described The lasers operated up to 0°C

InGaAsP/InP dual wavelength lasers

InGaAsP/InP dual wavelength TJS lasers emitting at 1.17 μm and 1.3 μm wavelengths at room temperature are described. The threshold currents for both diodes are the same. The fabrication procedure and characteristics of the lasers are presented.

Dual wavelength InGaAsP/Inp TJS lasers

In-Situ Scanning Electron Microscope Observation of Hydrogen Embrittlement in High-Strength Low-Alloy Steel by Near Atmospheric-Pressure Hydrogen Microplasma Jet

T. Aoki

Papers

InGaAsP/InP dual wavelength lasers

Dual wavelength InGaAsP/Inp TJS lasers

In-Situ Scanning Electron Microscope Observation of Hydrogen Embrittlement in High-Strength Low-Alloy Steel by Near Atmospheric-Pressure Hydrogen Microplasma Jet