Journal ArticleDOI
InGaAsP/InP dual wavelength lasers
TLDR
In this article, the first successful dual wavelength dual wavelength laser emitting at 12 μm and 13 μm wavelengths was described. The first successful single-antenna dual-wavelength dual-wave laser was operated up to 0°C.Abstract:
The first successful dual wavelength lasers emitting at 12 μm and 13 μm wavelengths are described The lasers operated up to 0°Cread more
Citations
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Journal ArticleDOI
Review and status of wavelength-division-multiplexing technology and its application
H. Ishio,J. Minowa,K. Nosu +2 more
TL;DR: In this article, state-of-the-art optical multi/demultiplexers (MUX/DEMUX) and WDM system design is reviewed and various system applications are also summarized.
Journal ArticleDOI
High-speed data transmission on an optical fiber using a byte-wide WDM system
M.L. Loeb,G.R. Stilwell +1 more
TL;DR: The advantages and problems of using wavelength division multiplexing (WDM) to transmit byte-wide data in parallel through a single-mode optical fiber are studied and the aggregate bit rate is shown to be equal to the aggregatebit rate of the serial link for all byte sizes.
Journal ArticleDOI
Electrooptic behaviour of proton exchanged LiNbO3 optical waveguides
TL;DR: In this article, le coefficient electrooptique d'un guide d'onde en metaniobate de lithium a partir de la deflexion de un faisceau gaussien lateral and de la mesure du decalage de phase, cause par l'application of un champ electrique externe sur la structure.
Journal ArticleDOI
Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy
J. S. Song,J.H. Chang,D. C. Oh,J. J. Kim,Meoungwhan Cho,Hisao Makino,Takashi Hanada,Takafumi Yao +7 more
TL;DR: In this article, a low-temperature grown buffer was used to reduce the formation of Ga-Se bonding, a well-known source of defect generation, due to interdiffusion through the heterointerface in the initial stage of growth.
Journal ArticleDOI
Bias‐controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser
TL;DR: In this article, the light emission characteristic of a GaAs/AlGaAs single quantum well laser with an intracavity monolithic loss modulator has been investigated, and it was shown that 2 mW of lasing light power can be modulated with a change in current of 250 μA and a voltage change of 1 V.
References
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Journal ArticleDOI
A new InGaAsP/InP dual‐wavelength LED
TL;DR: In this article, a dual-wavelength light-emitting diode (LED) emitting near 12 and 13 μm has been fabricated for wavelength-multiplexed optical communication systems.