Journal ArticleDOI
Dual wavelength InGaAsP/Inp TJS lasers
TLDR
InGaAsP/InP dual wavelength TJS lasers emitting at 1.17 μm and 1.3 μm wavelengths at room temperature are described in this article, where the threshold currents for both diodes are the same.Abstract:
InGaAsP/InP dual wavelength TJS lasers emitting at 1.17 μm and 1.3 μm wavelengths at room temperature are described. The threshold currents for both diodes are the same. The fabrication procedure and characteristics of the lasers are presented.read more
Citations
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Journal ArticleDOI
Adaptive sampling for improving the adaptation transients in hybrid adaptive control
TL;DR: In this paper, a simple method for the design of a hybrid adaptive control scheme by using adaptive sampling techniques so as to improve the adaptation transients is proposed, and some extensions which consider a parametric adaptation law involving a dead zone to achieve signal boundedness in the presence of bounded disturbances are also given.
Journal ArticleDOI
Operation principle of the InGaAsP/InP laser transistor
TL;DR: In this paper, the collector voltage and collector current can also be controlled by changing the base current of a laser transistor, achieving a maximum laser power of 3 mW, a current gain of 2000, and a transition frequency of 2.5 GHz.
Journal ArticleDOI
Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices
TL;DR: In this paper, a review of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system is presented.
Patent
Broadband laser amplifier structure
TL;DR: An injection laser fabricated in accordance with the teachings of the present invention comprises a laser cavity having first and second active laser regions disposed in tandem to provide gain distributions over wavelength regions in the two active laser region which partially overlap to form a combined gain distribution over a range of wavelengths as mentioned in this paper.
Patent
Semiconductor laser having at least two radiation beams, and method of manufacturing same
TL;DR: In this paper, the authors proposed a semiconductor laser device with two or more active and passive laser nodes, which can generate substantially parallel radiation beams (1, 2) of different frequencies which are situated close together.
References
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Journal ArticleDOI
High temperature single‐mode cw operation with a junction‐up TJS laser
TL;DR: In this paper, a modified TJS laser was developed, in which the current was effectively confined to the active region, and the laser operated continuously at over 100°C in a single longitudinal and fundamental transverse mode.
Journal ArticleDOI
InGaAsP/InP dual wavelength lasers
TL;DR: In this article, the first successful dual wavelength dual wavelength laser emitting at 12 μm and 13 μm wavelengths was described. The first successful single-antenna dual-wavelength dual-wave laser was operated up to 0°C.
Journal ArticleDOI
High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate
TL;DR: In this paper, a new TJS structure on a semi-insulating GaAs substrate has been developed, which has the simplest TJS and can operate continuously up to 110°C in a single longitudinal and fundamental transverse mode.
Journal ArticleDOI
A new InGaAsP/InP dual‐wavelength LED
TL;DR: In this article, a dual-wavelength light-emitting diode (LED) emitting near 12 and 13 μm has been fabricated for wavelength-multiplexed optical communication systems.