scispace - formally typeset
T

T. R. Arslanov

Researcher at Russian Academy of Sciences

Publications -  46
Citations -  131

T. R. Arslanov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Hydrostatic pressure & Magnetoresistance. The author has an hindex of 7, co-authored 36 publications receiving 121 citations.

Papers
More filters
Journal ArticleDOI

Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite

TL;DR: The effect of hydrostatic pressure on resistivity and magnetic ac susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT) ferromagnetic chalcopyrite with two types of MnAs micro-clusters.
Journal ArticleDOI

Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite

TL;DR: The effect of hydrostatic pressure on resistivity and magnetic ac susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT) ferromagnetic chalcopyrite with two types of MnAs micro-clusters as mentioned in this paper.
Journal ArticleDOI

Pressure control of magnetic clusters in strongly inhomogeneous ferromagnetic chalcopyrites

TL;DR: An external perturbation such as applied hydrostatic pressure in CdGeP2:Mn induces a two serial magnetic transitions from ferromagnet to non-magnet state at room temperature, related to the unconventional properties of created MnP magnetic clusters within the host material.
Journal ArticleDOI

Anomalies of magnetic properties and magnetovolume effect in Cd1−xMnxGeAs2 at hydrostatic pressure

TL;DR: In this paper, the effect of hydrostatic pressure up to P ≈ 1.5 GPa on the magnetic phase transition in diluted magnetic semiconductor Cd1−xMnxGeAs2 has been investigated.
Journal ArticleDOI

Changes in the magnetization hysteresis direction and structure-driven magnetoresistance of a chalcopyrite-based magnetic semiconductor

TL;DR: In this paper, the authors demonstrate that the room-temperature magnetization versus pressure for chalcopyrite semiconductor Zn1−x Mn x GeAs2 with x = 0.01 follows a usual direction of hysteresis.