The realization of gigahertz bandwidth modulators out of silicon-based technology in the early 2000s marked a cornerstone of silicon photonics development. While modulation speeds have since progressed well above 50 GHz and satisfy the bandwidth requirements of current and emerging modulation formats, concurrently obtaining low drive voltages and low insertion losses remains a very active area of research. While modulators generally come in two categories, direct absorption and those relying on embedded phase shifters, the focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation. The paper provides an overview of the current state of the art, as well as of currently explored improvement paths. First, common phase shifter configurations, aspects related to electrical driving, and associated power consumption are reviewed. Slow-wave, resonant, and plasmonic enhancements are further discussed. The reader is familiarized with the optimization of these devices and provided with a sense of the limitations of current technology and the potential of novel hybrid material integration.

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High-Speed Silicon Photonics Modulators

Client-side optics are facing an ever-increasing upgrading pace, driven by upcoming 5G related services and datacenter applications. The demand for a single lane data rate is soon approaching 200 Gbps. To meet such high-speed requirement, all segments of traditional intensity modulation direct detection (IM/DD) technologies are being challenged. The characteristics of electrical and optoelectronic components and the performance of modulation, coding, and digital signal processing (DSP) techniques are being stretched to their limits. In this context, we witnessed technological breakthroughs in several aspects, including development of broadband devices, novel modulation formats and coding, and high-performance DSP algorithms for the past few years. A great momentum has been accumulated to overcome the aforementioned challenges. In this article, we focus on IM/DD transmissions, and provide an overview of recent research and development efforts on key enabling technologies for 200 Gbps per lane and beyond. Our recent demonstrations of 200 Gbps short-reach transmissions with 4-level pulse amplitude modulation (PAM) and discrete multitone signals are also presented as examples to show the system requirements in terms of device characteristics and DSP performance. Apart from digital coherent technologies and advanced direct detection systems, such as Stokes–vector and Kramers–Kronig schemes, we expect high-speed IM/DD systems will remain advantageous in terms of system cost, power consumption, and footprint for short reach applications in the short- to mid- term perspective.

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200 Gbps/Lane IM/DD Technologies for Short Reach Optical Interconnects

Increasing the modulation speed of semiconductor lasers has attracted much attention from the viewpoint of both physics and the applications of lasers. Here we propose a membrane distributed reflector laser on a low-refractive-index and high-thermal-conductivity silicon carbide substrate that overcomes the modulation bandwidth limit. The laser features a high modulation efficiency because of its large optical confinement in the active region and small differential gain reduction at a high injection current density. We achieve a 42 GHz relaxation oscillation frequency by using a laser with a 50-μm-long active region. The cavity, designed to have a short photon lifetime, suppresses the damping effect while keeping the threshold carrier density low, resulting in a 60 GHz intrinsic 3 dB bandwidth (f3dB). By employing the photon–photon resonance at 95 GHz due to optical feedback from an integrated output waveguide, we achieve an f3dB of 108 GHz and demonstrate 256 Gbit s−1 four-level pulse-amplitude modulations with a 475 fJ bit−1 energy cost of the direct-current electrical input. Directly modulated membrane distributed reflector lasers are fabricated on a silicon carbide platform. The 3 dB bandwidth, four-level pulse-amplitude modulation speed and operating energy for transmitting one bit are 108 GHz, 256 Gbit s−1 and 475 fJ, respectively.

Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate

In this paper, transmission performances of directly modulated laser (DML), electro-absorption modulated laser (EML) and Mach-Zehnder modulator (MZM) are experimentally compared in dispersion-unmanaged high-speed transmission systems with digital signal processing (DSP). We show that, although the DML based transmitter is often believed to be less favorable in C-band high-speed transmissions, it exhibits superior performance over the other two transmitters when either linear or nonlinear digital signal processing is adopted. By theoretical and experimental analysis, we reveal that the superiority of DML can be attributed to the compensation of fiber power fading by its inherent adiabatic chirp as well as the mitigation of chirp induced distortions by the linear or nonlinear equalization. Experimental results of 56Gb/s 4-level pulse amplitude modulation (PAM4) signals under various equalization schemes including linear feedforward equalization, simplified nonlinear Volterra equalization and partial response signaling are presented. Particularly, we show that for DML a 40km transmission distance can be achieved to satisfy the extended range-4 (ER4) Ethernet interconnect using a simplified Volterra equalizer, and a 20km transmission distance can be supported using a linear equalizer. In contrast, for MZM and EML, the achievable transmission distances are respectively 20km and 15km using the Volterra equalizer, respectively, and 15km and 10km using linear equalizer, respectively. Moreover, we show that even using the combination of the Volterra equalizer and partial response signaling, the transmission distances of MZM and EML based systems are limited to 30km and 20km.

Performance comparison of DML, EML and MZM in dispersion-unmanaged short reach transmissions with digital signal processing.

We report on a 116 Gb/s on-off keying (OOK), four pulse amplitude modulation (PAM) and 105-Gb/s 8-PAM optical transmitter using an InP-based integrated and packaged externally modulated laser for high-speed optical interconnects with up to 30 dB static extinction ratio and over 100-GHz 3-dB bandwidth with 2 dB ripple. In addition, we study the tradeoff between power penalty and equalizer length to foresee transmission distances with standard single mode fiber.

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100 GHz Externally Modulated Laser for Optical Interconnects

We report on a 116 Gbit/s OOK, 4PAM and 105 Gbit/s 8PAM optical transmitter using InP-based integrated EML for interconnect applications with up to 30 dB static extinction ratio and over 100 GHz 3 ...

Tadeusz Asyngier

Papers

100 GHz Externally Modulated Laser for Optical Interconnects

100 GHz EML for High Speed Optical Interconnect Applications