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Takafumi Yao

Researcher at Tohoku University

Publications -  591
Citations -  14672

Takafumi Yao is an academic researcher from Tohoku University. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 49, co-authored 591 publications receiving 14287 citations. Previous affiliations of Takafumi Yao include National Institute of Advanced Industrial Science and Technology.

Papers
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Journal ArticleDOI

Time dependence of water‐reducing photocurrent with change of the characteristics of n‐type GaN photo‐illuminated working electrodes

Katsushi Fujii, +5 more
- 01 Jul 2011 - 
TL;DR: In this paper, the relationship between the characteristics of n-type GaN and the photocurrent stability was discussed, and the amount of Si doping was clarified to relate to the stability.
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Observation of activation of Li atoms in ZnSe by photoluminescence

Ziqiang Zhu, +2 more
- 01 Feb 1993 - 
TL;DR: In this paper, the photoluminescence study of activation of a Li dopant in ZnSe films has been conducted and it has been found that the amphoteric role of the Li dopants is strongly influenced by annealing or substrate temperature.
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MBE growth of Zn-polar ZnO on MOCVD-ZnO templates

Hiroyuki Kato, +6 more
- 01 Oct 2004 - 
TL;DR: In this paper, high-quality Zn-polar ZnO films were grown on metal-organic chemical-vapor deposition (MOCVD) grown ZNO/a-sapphire templates by plasma-assisted molecular beam epitaxy (MBE).
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Fabrication of free-standing GaN substrate using evaporable buffer layer (EBL)

Hyunjae Lee, +9 more
- 01 Jun 2009 - 
TL;DR: In this paper, a one-step approach to obtain high quality free-standing GaN (FS-GaN) substrates by hydride vapor phase epitaxy (HVPE) has been developed.
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Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

Hyo-Jong Lee, +13 more
- 16 Nov 2007 - 
TL;DR: In this paper, a grazing incidence x-ray diffraction with a synchrotron radiation and a cross-sectional high-resolution transmission electron microscopy were performed on the sapphire surface nitrided at 1080°C for 30min.