抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

I have developed "tennis elbow" from lugging this book around the past four weeks, but it is worth the pain, the effort, and the aspirin. It is also worth the (relatively speaking) bargain price. Including appendixes, this book contains 894 pages of text. The entire panorama of the neural sciences is surveyed and examined, and it is comprehensive in its scope, from genomes to social behaviors. The editors explicitly state that the book is designed as "an introductory text for students of biology, behavior, and medicine," but it is hard to imagine any audience, interested in any fragment of neuroscience at any level of sophistication, that would not enjoy this book. The editors have done a masterful job of weaving together the biologic, the behavioral, and the clinical sciences into a single tapestry in which everyone from the molecular biologist to the practicing psychiatrist can find and appreciate his or

Principles of Neural Science

http://sces.phys.utk.edu/mostcited/mc1_1114.pdf

Colossal Magnetoresistant Materials: The Key Role of Phase Separation

Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin‐dependent electron scattering due to spin canting of the manganese oxide.

31p-S-4 Giant Magnetoresistance in Magnetic Manganese Oxide with Intrinsic Antiferromagnetic Spin Structure

We report magnetic and transport properties of ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Ba}}_{x}{\mathrm{MnO}}_{3}$ $(x=0.05--0.33)$ epitaxial thin films. Compared with the corresponding bulk materials, the ferromagnetic transition temperature is reduced in the compressive strained ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Ba}}_{x}{\mathrm{MnO}}_{3}$ thin films with $x=0.3$ and 0.33, but enhanced significantly in the tensile strained thin films with $xl~0.2.$ Especially, ferromagnetism and low field colossal magnetoresistance effect were observed around room temperature in $x=0.1$ thin film, and as $x=0.05,$ a spin-canting insulating state in bulk shifts to ferromagnetic metallic state in thin film. The phase diagram of ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Ba}}_{x}{\mathrm{MnO}}_{3}$ thin films was obtained, and strain effect on these novel properties was discussed.

Strain effect and the phase diagram of La 1 − x Ba x MnO 3 thin films

Two-terminal multistate memory elements based on VO(2)/TiO(2) thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO(2). The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation.

Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating.

We achieved enhancement of colossal magnetoresistance at room temperature in a tensile strained ${\mathrm{La}}_{0.8}{\mathrm{Ba}}_{0.2}{\mathrm{MnO}}_{3}$ thin film (52% at 297 K under an applied field of 0.8 T). Surprisingly, the tensile strain increased the Curie temperature ${T}_{C}$ from 270 K in the bulk to 320 K in the thin film. While it is well known that tensile strain decreases ${T}_{C}$ through a decrease of the transfer integral ${t}_{0}$ in $(\mathrm{La},D){\mathrm{MnO}}_{3}$ $(D=\mathrm{Ca}$ or Sr), this unprecedented anomalous strain effect in ${\mathrm{La}}_{0.8}{\mathrm{Ba}}_{0.2}{\mathrm{MnO}}_{3}$ films could not be explained by ${t}_{0}$ alone; the orbital degree of freedom also needed to be considered. We successfully derived an equation for ${T}_{C}$ including both effects in the strained thin films.

Anomalous strain effect in La 0.8 Ba 0.2 MnO 3 epitaxial thin film: Role of the orbital degree of freedom in stabilizing ferromagnetism

We have constructed field-effect transistor structures that consist of a ferromagnetic (La,Ba)MnO3 channel and a ferroelectric PbZr0.2Ti0.8O3 gate insulator with the aim of controlling the metal–insulator transition at room temperature by applying an electric field. Investigations have revealed that the transition temperature changed from 237.0 K to 242.0 K for the La0.90Ba0.10MnO3 channel layer by ferroelectric remnant polarity (±50 μC/cm2) and from 280.5 K to 283.0 K (±26 μC/cm2) for the La0.85Ba0.15MnO3 channel layer. These shifts, which are linearly proportional to the magnitude of ferroelectric remnant polarization, are induced by the accumulation charge due to the electric field.

Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor

Spintronics, which takes advantage of both spin and charge degrees of freedom, is a promising key technique relevant to future applications of information and data storage. Ferromagnetic transition metal oxides, including perovskite manganites, represent the most promising materials for use as devices controlling magnetic states by an electric field at high temperature with high efficiency. This is because these materials possess a strong intrinsic relationship between charge and magnetism, showing ferromagnetism above room temperature by adjustment of carrier filling, in addition, particular magnetoelectric properties such as a colossal magnetoresistance phenomenon. Nevertheless, the device operation such a field control of magnetism has not been verified so far in manganites. It is essential to determine whether the magnetism of manganites can be controlled via carriers modulated by an electric field in these applications. Here the authors report on the direct demonstration of a simultaneous change in t...

Teruo Kanki

Papers

Strain effect and the phase diagram of La 1 − x Ba x MnO 3 thin films

Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating.

Anomalous strain effect in La 0.8 Ba 0.2 MnO 3 epitaxial thin film: Role of the orbital degree of freedom in stabilizing ferromagnetism

Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor

Electric control of room temperature ferromagnetism in a Pb(Zr0.2Ti0.8)O3∕La0.85Ba0.15MnO3 field-effect transistor