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Thanh Thuy Trinh

Researcher at International University, Cambodia

Publications -  24
Citations -  524

Thanh Thuy Trinh is an academic researcher from International University, Cambodia. The author has contributed to research in topics: Thin-film transistor & Non-volatile memory. The author has an hindex of 11, co-authored 24 publications receiving 430 citations. Previous affiliations of Thanh Thuy Trinh include Sungkyunkwan University & Vietnam National University, Ho Chi Minh City.

Papers
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Journal ArticleDOI

Improving the ethanol sensing of ZnO nano-particle thin films—The correlation between the grain size and the sensing mechanism

Thanh Thuy Trinh, +7 more
- 20 Feb 2011 - 
TL;DR: In this article, a TEM analysis of the ZnO:Sn thin films at various doping levels from 1 to 10.% was performed to verify the grain size of the films.
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Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Jayapal Raja, +5 more
- 26 Feb 2013 - 
TL;DR: In this article, the stability of nitrogen doped amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was investigated and it was observed that nitrogen doping enhances device stability by well controlled oxygen vacancy and trap sites in channel and channel/dielectric interface.
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Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Thanh Thuy Trinh, +7 more
- 10 May 2011 - 
TL;DR: In this paper, the post-annealing effects on IGZO thin films to compensate the oxygen deficiencies in films as well as on TFT devices to reduce the densities of the interface trap between the active layer and insulator were presented.
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Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel

Jayapal Raja, +5 more
- 01 Jan 2013 - 
TL;DR: In this paper, the correlation between material properties and their effects on electrical stability of a-IGZO thin-film transistor (TFTs) was studied as a function of p d.
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Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels

Hong Hanh Nguyen, +6 more
- 01 Oct 2011 - 
TL;DR: In this article, the electrical and memory properties of nonvolatile memory (NVM) using low temperature multistack gate insulators of SiO2/SiOx/Si OxNy (OOxOn) and an active layer using amorphous InGaZnO (a-IGZO) films were investigated.