Thomas Kanne

TL;DR: In this paper, the growth and characterization of epitaxial InAs${}_{1\ensuremath{-}x}$Sb${}{x}/$/Al nanowires where both composition and crystal structure of the semiconductor is varied is presented.

TL;DR: In this paper, the authors report on hybrid epitaxy of freestanding vapor-liquid-solid grown and in-plane selective area grown semiconductor-ferromagnetic insulator-superconductor (InAs/EuS/Al) nanowire heterostructures.

TL;DR: This work introduces a crystal growth platform-based on 3D structuring of growth substrates-which enables synthesis of semiconductor nanowire hybrids with in situ patterned superconductor shells, thereby enabling full freedom in the choice of hybrid constituents.

TL;DR: Winkler et al. as mentioned in this paper showed that the epitaxial InAsSb/Al interfaces allow for a hard induced superconducting gap and 2$e$ transport in Coulomb charging experiments.

TL;DR: In this article, the authors harnessed increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single crystal, atomically flat Pb films along the entire nanowire.