M
Martin Espiñeira Cachaza
Researcher at University of Copenhagen
Publications - 5
Citations - 108
Martin Espiñeira Cachaza is an academic researcher from University of Copenhagen. The author has contributed to research in topics: Nanowire & Semiconductor. The author has an hindex of 2, co-authored 5 publications receiving 51 citations. Previous affiliations of Martin Espiñeira Cachaza include Microsoft.
Papers
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Journal ArticleDOI
Semiconductor-Ferromagnetic Insulator-Superconductor Nanowires: Stray Field and Exchange Field.
Yu Liu,Yu Liu,S. Vaitiekėnas,Sara Martí-Sánchez,Christian Koch,Sean Hart,Sean Hart,Zheng Cui,Zheng Cui,Thomas Kanne,Sabbir A. Khan,Sabbir A. Khan,Rawa Tanta,Rawa Tanta,Shivendra Upadhyay,Martin Espiñeira Cachaza,Martin Espiñeira Cachaza,Charles Marcus,Jordi Arbiol,Kathryn A. Moler,Kathryn A. Moler,Peter Krogstrup,Peter Krogstrup +22 more
TL;DR: In this paper, the authors report on hybrid epitaxy of freestanding vapor-liquid-solid grown and in-plane selective area grown semiconductor-ferromagnetic insulator-superconductor (InAs/EuS/Al) nanowire heterostructures.
Journal ArticleDOI
Highly Transparent Gatable Superconducting Shadow Junctions.
Sabbir A. Khan,Charalampos Lampadaris,Charalampos Lampadaris,Ajuan Cui,Ajuan Cui,Lukas Stampfer,Yu Liu,Yu Liu,S. J. Pauka,Martin Espiñeira Cachaza,Martin Espiñeira Cachaza,Elisabetta Maria Fiordaliso,Jung-Hyun Kang,Jung-Hyun Kang,Svetlana Korneychuk,Timo Mutas,Joachim E. Sestoft,Filip Krizek,Rawa Tanta,Rawa Tanta,Maja C. Cassidy,Thomas Sand Jespersen,Peter Krogstrup,Peter Krogstrup +23 more
TL;DR: This study grows single crystalline InAs, InSb, and InAs1-xSbx nanowires with epitaxial superconductors and in-situ shadowed junctions and demonstrates a promising engineering path towards reliable gate-tunable superconducting qubits.
Journal ArticleDOI
Selective Area Growth Rates of III-V Nanowires
Martin Espiñeira Cachaza,Martin Espiñeira Cachaza,Anna Wulff Christensen,Anna Wulff Christensen,Daria Beznasyuk,Daria Beznasyuk,Tobias Særkjær,Tobias Særkjær,Morten Hannibal Madsen,Rawa Tanta,Gunjan Nagda,Gunjan Nagda,Sergej Schuwalow,Sergej Schuwalow,Peter Krogstrup +14 more
TL;DR: In this paper, the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays are reported. But the authors do not consider the design parameters such as NW pitch, width, and orientation.
Posted Content
Transparent Gatable Superconducting Shadow Junctions
Sabbir A. Khan,Charalampos Lampadaris,Ajuan Cui,Lukas Stampfer,Yu Liu,S. J. Pauka,Martin Espiñeira Cachaza,Elisabetta Maria Fiordaliso,Jung-Hyun Kang,Svetlana Korneychuk,Timo Mutas,Joachim E. Sestoft,Filip Krizek,Rawa Tanta,Maja C. Cassidy,Thomas Sand Jespersen,Peter Krogstrup +16 more
TL;DR: In this article, a single-step molecular beam epitaxy process was used to grow single crystalline InAs, InSb and InAs1-Sb nanowires with epitaxial superconductors and in-situ shadowed junctions.
Journal ArticleDOI
Selective area growth rates of III-V nanowires
Martin Espiñeira Cachaza,Martin Espiñeira Cachaza,Anna Wulff Christensen,Anna Wulff Christensen,Daria Beznasyuk,Daria Beznasyuk,Tobias Særkjær,Tobias Særkjær,Morten Hannibal Madsen,Rawa Tanta,Gunjan Nagda,Gunjan Nagda,Sergej Schuwalow,Sergej Schuwalow,Peter Krogstrup,Peter Krogstrup +15 more
TL;DR: In this paper, the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays are reported. And the authors show that inhomogeneous growth rates can be compensated by tuning the design parameters.