Thomas Käsebier

TL;DR: In this article, the optical and opto-electronic properties of black silicon (b-Si) nanostructures passivated with Al2O3 were investigated and it was shown that control of plasma-induced subsurface damage is equally important to achieve low interface recombination.

TL;DR: In this paper, an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties is presented, where the optical absorption and the minority carrier lifetime are used as benchmark parameters.

TL;DR: In this paper, the structure evolution and the dependency of final structure geometry on the main processing parameters gas composition and working pressure are investigated and explained comprehensively, and the optical properties of the produced Black Silicon structures, a distinct antireflection and light trapping effect, are resolved by optical spectroscopy and conclusively illustrated by optical simulations of accurate models of the real nanostructures.

TL;DR: An iridium wire grid polarizer with a large spectral working range from IR down to the UV spectral region is presented and the oxidation resistance is discussed.

TL;DR: In this article, an ultra-black (A > 99%) broadband absorber concept on the basis of a needle-like silicon nanostructure called Black Silicon is proposed, which comprises Black Silicon established by inductively coupled plasma reactive ion etching (ICP-RIE) on a highly doped, degenerated silicon substrate.