Journal ArticleDOI
Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition
Martin Otto,Matthias Kroll,Thomas Käsebier,Roland Salzer,Andreas Tünnermann,Ralf B. Wehrspohn +5 more
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TLDR
In this article, the optical and opto-electronic properties of black silicon (b-Si) nanostructures passivated with Al2O3 were investigated and it was shown that control of plasma-induced subsurface damage is equally important to achieve low interface recombination.Abstract:
We investigate the optical and opto-electronic properties of black silicon (b-Si) nanostructures passivated with Al2O3. The b-Si nanostructures significantly improve the absorption of silicon due to superior anti-reflection and light trapping properties. By coating the b-Si nanostructures with a conformal layer of Al2O3 by atomic layer deposition, the surface recombination velocity can be effectively reduced. We show that control of plasma-induced subsurface damage is equally important to achieve low interface recombination. Surface recombination velocities of Seff<13 cm/s have been measured for an optimized structure which, like the polished reference, exhibits lifetimes in the millisecond range.read more
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Silicon nanostructures for photonics and photovoltaics
TL;DR: Focusing on two application areas, namely communications and photovoltaics, the state of the art in each field is assessed and the challenges that need to be overcome are highlighted to make silicon a truly high-performing photonic material.
Journal ArticleDOI
Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency
Hele Savin,Päivikki Repo,Guillaume von Gastrow,Pablo Ortega,Eric Calle,M. Garín,Ramon Alcubilla +6 more
TL;DR: It is demonstrated that efficiencies above 22% can be reached, even in thick interdigitated back-contacted cells, where carrier transport is very sensitive to front surface passivation, meaning that the surface recombination issue has truly been solved and black silicon solar cells have real potential for industrial production.
Journal ArticleDOI
Black silicon: fabrication methods, properties and solar energy applications
Xiaogang Liu,Xiaogang Liu,Paul R. Coxon,Marius Peters,Bram Hoex,Jacqueline M. Cole,Jacqueline M. Cole,Derek J. Fray +7 more
TL;DR: In this article, the use of black silicon (BSi) as an anti-reflection coating in solar cells is examined and appraised, based upon strategies towards higher efficiency renewable solar energy modules.
Journal ArticleDOI
Silicon solar cells: toward the efficiency limits
TL;DR: The photovoltaic conversion of solar energy starts to give an appreciable contribution to power generation in many countries, with more than 90% of the global PV market relying on solar cells base.
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Structural and XPS characterization of ALD Al2O3 coated porous silicon
Igor Iatsunskyi,Igor Iatsunskyi,Mateusz Kempiński,Mariusz Jancelewicz,Karol Załęski,Stefan Jurga,Valentyn Smyntyna +6 more
TL;DR: Al 2 O 3 thin films were grown on highly-doped p-Si (100) macro-and mesoporous structures by atomic layer deposition (ALD) using trimethylaluminum (TMA) and water H 2 O as precursors at 300°C as discussed by the authors.
References
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Journal ArticleDOI
Statistical ray optics.
TL;DR: In this paper, a statistical approach is taken toward the ray optics of optical media with complicated nonspherical and nonplanar surface shapes, where the light in such a medium will tend to be randomized in direction and of 2n2(x) times greater intensity than the externally incident light, where n(x), is the local index of refraction.
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Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients
TL;DR: In this article, an updated tabulation of the optical properties of intrinsic silicon, of particular interest in solar cell calculations, is presented, with improved values of absorption coefficient, refractive index and extinction coefficient over the 0.25-1.45μm wavelength range at 0.01-μm intervals.
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Synthesis and Surface Engineering of Complex Nanostructures by Atomic Layer Deposition
TL;DR: Atomic layer deposition (ALD) has become the method of choice for the semiconductor industry to conformally process extremely thin insulating layers (high-k oxides) onto large-area silicon substrates as discussed by the authors.
Journal ArticleDOI
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
TL;DR: The state-of-the-art surface passivation of c-Si solar cells is achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13cm∕s on low resistivity n- and p-type cSi, respectively as mentioned in this paper.
Journal ArticleDOI
The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control
TL;DR: In this paper, the Black Silicon Method was used to find the processing conditions needed for a vertical wall in a Reactive Ion Etchers (RIE); two parallel plate reactors and a hexode.