An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Data movement between the processing units and the memory in traditional von Neumann architecture is creating the “memory wall” problem. To bridge the gap, two approaches, the memory-rich processor (more on-chip memory) and the compute-capable memory (processing-in-memory) have been studied. However, the first one has strong computing capability but limited memory capacity/bandwidth, whereas the second one is the exact the opposite.To address the challenge, we propose DRISA, a DRAM-based Reconfigurable In-Situ Accelerator architecture, to provide both powerful computing capability and large memory capacity/bandwidth. DRISA is primarily composed of DRAM memory arrays, in which every memory bitline can perform bitwise Boolean logic operations (such as NOR). DRISA can be reconfigured to compute various functions with the combination of the functionally complete Boolean logic operations and the proposed hierarchical internal data movement designs. We further optimize DRISA to achieve high performance by simultaneously activating multiple rows and subarrays to provide massive parallelism, unblocking the internal data movement bottlenecks, and optimizing activation latency and energy. We explore four design options and present a comprehensive case study to demonstrate significant acceleration of convolutional neural networks. The experimental results show that DRISA can achieve 8.8× speedup and 1.2× better energy efficiency compared with ASICs, and 7.7× speedup and 15× better energy efficiency over GPUs with integer operations.CCS CONCEPTS• Hardware → Dynamic memory; • Computer systems organization → reconfigurable computing; Neural networks;

DRISA: a DRAM-based Reconfigurable In-Situ Accelerator

In one embodiment, a conductive interconnect ( 38 ) is formed in a semiconductor device by depositing a dielectric layer ( 28 ) on a semiconductor substrate ( 10 ). The dielectric layer ( 28 ) is then patterned to form an interconnect opening ( 29 ). A tantalum nitride barrier layer ( 30 ) is then formed within the interconnect opening ( 29 ). A catalytic layer ( 31 ) comprising a palladium-tin colloid is then formed overlying the tantalum nitride barrier layer ( 30 ). A layer of electroless copper ( 32 ) is then deposited on the catalytic layer ( 31 ). A layer of electroplated copper ( 34 ) is then formed on the electroless copper layer ( 32 ), and the electroless copper layer ( 32 ) serves as a seed layer for the electroplated copper layer ( 34 ). Portions of the electroplated copper layer ( 34 ) are then removed to form a copper interconnect ( 38 ) within the interconnect opening ( 29 ).

Interconnect structure in a semiconductor device and method of formation

A microelectronic substrate including at least one microelectronic device disposed within an opening in a microelectronic substrate core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic devices, or a plurality microelectronic devices encapsulated without the microelectronic substrate core. At least one conductive via extended through the substrate, which allows electrical communication between opposing sides of the substrate. Interconnection layers of dielectric materials and conductive traces are then fabricated on the microelectronic device, the encapsulation material, and the microelectronic substrate core (if present) to form the microelectronic substrate.

Microelectronic substrates with integrated devices

A wired circuit board has a metal supporting board, an insulating layer formed on the metal supporting board, a conductive pattern formed on the insulating layer and having a pair of wires arranged in spaced-apart relation, and a semiconductive layer formed on the insulating layer and electrically connected to the metal supporting board and the conductive pattern The conductive pattern has a first region in which a distance between the pair of wires is small and a second region in which the distance between the pair of wires is larger than that in the first region The semiconductive layer is provided in the second region

Wired circuit board

PROBLEM TO BE SOLVED: To provide a manufacturing method of a circuit board assembly in which the conductor pads of two auxiliary circuit boards are electrically connected with sure. SOLUTION: The manufacturing method includes a process (1) in which the first and second auxiliary circuit boards are supplied, a process (2) in which the first and second auxiliary circuit boards are matched by making metal conductor pads face each other, a process (3) in which a fluidable insulation board having an opening is arranged between the first and second auxiliary circuit boards, a process (4) in which a solder paste of appropriate amount is attached to at least one of a pair of metal conductor pads, and a process (5) in which the first and second circuit boards are pressed and heated for integration. COPYRIGHT: (C)2008,JPO&INPIT

Manufacturing method of circuit board which has solder paste connection part

A PWB or multilayer board with circuit traces is treated by a process that serves to reduce the incident of failure of the board. The process includes the steps of applying a thin commoning layer of copper onto a catalyzed surface of the board substrate and the circuit lines. A photoresist is then applied over the commoning layer after which the photoresist is removed only from the commoning material over the circuit lines. A thin layer of a more noble metal, such as nickel, is electrodeposited over the exposed conductive layer. This is followed by a gold layer electrodeposited over the nickel in close registry therewith. The process provides the traces with a conforming nickel/gold layer that extends down the side of the traces. This reduces the tendency of a subsequent copper etch step from undercutting the nickel/gold, thereby causing slivers that could cause short circuiting between adjacent circuit patterns.

Method of making a printed wiring board with conformally plated circuit traces

Ball Grid Array packages having decreased adhesion of the BGA pad to the laminate surface and methods for producing same are provided.

Method of fabricating a BGA package having decreased adhesion

A method for creating an impedance controlled printing wiring board, particularly the formation of a structure for high speed printed wiring boards incorporating multiple differential impedance controlled layers. Furthermore, disclosed is the provision of a method for producing an impedance controlled printed circuit wiring board. Also, there is the provision of a method for producing high speed printed wiring boards with multiple differential impedance controlled layers.

Thomas R. Miller

Papers

Manufacturing method of circuit board which has solder paste connection part

Method of making a printed wiring board with conformally plated circuit traces

Method of fabricating a BGA package having decreased adhesion

Method for producing an electronic package possessing controlled impedance characteristics