Tien-Hao Tang

TL;DR: An electrostatic discharge protection device comprises a substrate with a first conductivity, a gate, a drain structure and a source structure as mentioned in this paper, where the source structure with the second conductivity is disposed in the substrate and adjacent to the gate electrode.

TL;DR: In this paper, an electrostatic discharge (ESD) protection circuit with silicon-controlled-rectifier (SCR) device has been designed without latch-up risk, which can sustain 6.2kV human-body model (HBM) and 475V machine model (MM) ESD tests.

TL;DR: A fin type ESD protection device includes at least one first fin, at least first second fin, and at least gate structure as discussed by the authors, and the gate structure is disposed between the source contact and the drain contact.

TL;DR: The dependence of device structures and layout parameters on ESD robustness of HV MOSFETs in high-voltage 40-V CMOS process has been investigated by device simulation and verified in silicon test chips as mentioned in this paper.

TL;DR: An ESD protection semiconductor device includes a substrate, gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set.