Showing papers by "Tigran T. Mnatsakanov published in 2006"

On the thermal stability of high-voltage rectifier diodes

Abstract: An analytical theory that makes it possible to determine the parameters of inversion points in current–voltage characteristics of high-voltage p–i–n rectifier diodes is suggested. All the main nonlinear processes (electron–hole scattering (EHS), Auger recombination, gap narrowing in a highly doped emitter) are considered. The temperature dependences of all the main parameters, including the bandgap, carrier (electron and hole) mobilities and diffusion coefficients, EHS, contact resistance and nonequilibrium carrier lifetime are taken into account. The predictions of the theory are compared with the results of adequate numerical experiments for a high-voltage (10 kV class) 4H-SiC p+–i–n diode. The numerical data obtained coincide well with the predictions of the analytical theory.

Transient injection and fast switch on in p‐i‐n diodes

Abstract: Fast and ultrafast switch-on processes in p‐n diodes at very high current densities j and very short current rise time τ0 have been investigated analytically. It is demonstrated that even at relatively modest values of the rate of current density rise dj∕dt, the switch-on transient fundamentally differs from that in the “classical” quasineutral mode. The switch-on processes occur in modes with broken neutrality. The base resistivity is modulated by fast hole and electron waves that propagate toward each other at the maximum possible (saturation) velocities. The conditions for the appearance of fast waves have been established. Analytical expressions for the initial stage of propagation of these waves have been derived. Adequate computer simulation confirms the analytical results.