An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Traditional von Neumann computing systems involve separate processing and memory units. However, data movement is costly in terms of time and energy and this problem is aggravated by the recent explosive growth in highly data-centric applications related to artificial intelligence. This calls for a radical departure from the traditional systems and one such non-von Neumann computational approach is in-memory computing. Hereby certain computational tasks are performed in place in the memory itself by exploiting the physical attributes of the memory devices. Both charge-based and resistance-based memory devices are being explored for in-memory computing. In this Review, we provide a broad overview of the key computational primitives enabled by these memory devices as well as their applications spanning scientific computing, signal processing, optimization, machine learning, deep learning and stochastic computing. This Review provides an overview of memory devices and the key computational primitives for in-memory computing, and examines the possibilities of applying this computing approach to a wide range of applications.

Memory devices and applications for in-memory computing

An Interferometric Modulator (IMod) is a microelectromechanical device for modulating light using interference. The colors of these devices may be determined in a spatial fashion, and their inherent color shift may be compensated for using several optical compensation mechanisms. Brightness, addressing, and driving of IMods may be accomplished in a variety of ways with appropriate packaging, and peripheral electronics which can be attached and/or fabricated using one of many techniques. The devices may be used in both embedded and directly perceived applications, the latter providing multiple viewing modes as well as a multitude of product concepts ranging in size from microscopic to architectural in scope.

Interferometric modulation of radiation

This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

Handbook of physical vapor deposition (PVD) processing

An interference modulator (Imod) incorporates anti-reflection coatings and/or micro-fabricated supplemental lighting sources. An efficient drive scheme is provided for matrix addressed arrays of IMods or other micromechanical devices. An improved color scheme provides greater flexibility. Electronic hardware can be field reconfigured to accommodate different display formats and/or application functions. An IMod's electromechanical behavior can be decoupled from its optical behavior. An improved actuation means is provided, some one of which may be hidden from view. An IMod or IMod array is fabricated and used in conjunction with a MEMS switch or switch array. An IMod can be used for optical switching and modulation. Some IMods incorporate 2-D and 3-D photonic structures. A variety of applications for the modulation of light are discussed. A MEMS manufacturing and packaging approach is provided based on a continuous web fed process. IMods can be used as test structures for the evaluation of residual stress in deposited materials.

Photonic mems and structures

Reliability challenges for copper interconnects

A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade. Also, a process is provided for making a microfan which includes forming a strip of sacrificial material on a planar surface of a heat source, applying a spin on insulating layer over the heat source and the strip for producing a sloping surface extending from about the top of the strip toward the planar surface of the heat source, applying a layer of conductive material on the sloping surface and strip and defining from the layer of conductive material a fan blade on the sloping surface of the spin on insulating layer and a stator at one end of the fan blade.

Cooling microfan arrangements and process

In the course of Cu/low-k technology development and qualification, low-k time-dependent dielectric breakdown (TDDB) is rapidly becoming one of the most important reliability issues. In order to accurately predict low-k TDDB reliability, it is crucial to clarify the electric field dependence and temperature dependence of time-to-breakdown. In this study, bias-temperature stresses of CVD low-k SiCOH dielectric at the 65nm technology node were conducted over a wide range of fields and temperatures. Based on the extensive long-term test results (longer than one year), it was found that the "square-root of E" (radicE) dependence seems to be the best choice for modeling field dependent TDDB data. It was also determined that the TDDB activation energy is dependent on electric field, and that the field acceleration parameter for the radicE model decreases with increasing temperature. The physical mechanism behind radicE and the role of Cu diffusion during bias-temperature-stress are discussed, and an electron-fluence-driven, Cu-catalyzed SiCOH breakdown model is introduced. Finally, it is emphasized that great care must be taken in evaluating low-k dielectric TDDB when different stress fields and temperatures are used for chip operational lifetime projections

A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development

Preface. 1 INTRODUCTION ( Alvin W. Strong ). 1.1 Book Philosophy. 1.2 Lifetime and Acceleration Concepts. 1.3 Mechanism Types. 1.4 Reliability Statistics. 1.5 Chi-Square and Student t Distributions. 1.6 Application. 2 DIELECTRIC CHARACTERIZATION AND RELIABILITY METHODOLOGY ( Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sune ). 2.1 Introduction. 2.2 Fundamentals of Insulator Physics and Characterization. 2.3 Measurement of Dielectric Reliability. 2.4 Fundamentals of Dielectric Breakdown Statistics. 2.5 Summary and Future Trends. 3 DIELECTRIC BREAKDOWN OF GATE OXIDES: PHYSICS AND EXPERIMENTS ( Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sune ). 3.1 Introduction. 3.2 Physics of Degradation and Breakdown. 3.3 Physical Models for Oxide Degradation and Breakdown. 3.4 Experimental Results of Oxide Breakdown. 3.5 Post-Breakdown Phenomena. 4 NEGATIVE BIAS TEMPERATURE INSTABILITIES IN pMOSFET DEVICES ( Giuseppe LaRosa ). 4.1 Introduction. 4.2 Considerations on NBTI Stress Configurations. 4.3 Appropriate NBTI Stress Bias Dependence. 4.4 Nature of the NBTI Damage. 4.5 Impact of the NBTI Damage to Key pMOSFET Transistor Parameters. 4.6 Physical Mechanisms Contributing to the NBTI Damage. 4.7 Key Experimental Observations on the NBTI Damage. 4.8 Nit Generation by Reaction-Diffusion (R-D) Processes. 4.9 Hole Trapping Modeling. 4.10 NBTI Dependence on CMOS Processes. 4.11 NBTI Dependence on Area Scaling. 4.12 Overview of Key NBTI Features. 5 HOT CARRIERS ( Stewart E. Rauch, III ). 5.1 Introduction. 5.2 Hot Carriers: Physical Generation and Injection Mechanisms. 5.3 Hot Carrier Damage Mechanisms. 5.4 HC Impact to MOSFET Characteristics. 5.5 Hot Carrier Shift Models. 6 STRESS-INDUCED VOIDING ( Timothy D. Sullivan ). 6.1 Introduction. 6.2 Theory and Model. 6.3 Role of the Overlying Dielectric. 6.4 Summary of Voiding in Al Metallizations 6.5 Stress Voiding in Cu Interconnects. 6.6 Concluding Remarks. 7 ELECTROMIGRATION ( Timothy D. Sullivan ). 7.1 Introduction. 7.2 Metallization Failure. 7.3 Electromigration. 7.4 General Approach to Electromigration Reliability. 7.5 Thermal Considerations for Electromigration. 7.6 Closing Remarks. Index.

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Physical phenomena underlying failure due to electromigration and stress-induced voiding in fine Al and Al-alloy thin-film conducting lines are examined in the context of accelerated testing methods and structures. Aspects examined include effects due to line isolation (the absence of reservoirs at conductor ends), solute and precipitate phenomena, conductor critical (Blech) length, microstructure, film deposition conditions, and thermal processing subsequent to film deposition. Emphasis is on the isolated, submicron-wide, Al(Cu)-based thin-film interconnection lines of IBM VLSI logic and memory chips.

Timothy D. Sullivan

Papers

Reliability challenges for copper interconnects

Cooling microfan arrangements and process

A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Electromigration and stress-induced voiding in fine Al and Al-alloy thin-filmed lines