Over the past few decades, the design and development of advanced electrocatalysts for efficient energy conversion technologies have been subjects of extensive study. With the discovery of graphene, two-dimensional (2D) nanomaterials have emerged as some of the most promising candidates for heterogeneous electrocatalysts due to their unique physical, chemical, and electronic properties. Here, we review 2D-nanomaterial-based electrocatalysts for selected electrocatalytic processes. We first discuss the unique advances in 2D electrocatalysts based on different compositions and functions followed by specific design principles. Following this overview, we discuss various 2D electrocatalysts for electrocatalytic processes involved in the water cycle, carbon cycle, and nitrogen cycle from their fundamental conception to their functional application. We place a significant emphasis on different engineering strategies for 2D nanomaterials and the influence these strategies have on intrinsic material performance, ...

Emerging Two-Dimensional Nanomaterials for Electrocatalysis

A metallic nanostructure consisting of a disk inside a thin ring supports superradiant and very narrow subradiant modes. Symmetry breaking in this structure enables a coupling between plasmon modes of differing multipolar order, resulting in a tunable Fano resonance. The LSPR sensitivities of the subradiant and Fano resonances are predicted to be among the largest yet for individual nanostructures.

Symmetry breaking in plasmonic nanocavities: subradiant LSPR sensing and a tunable Fano resonance.

Carbon nanotubes as adsorbents in environmental pollution management: A review

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

/pdf/the-2018-gan-power-electronics-roadmap-2iunv619fh.pdf

The 2018 GaN power electronics roadmap

J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

A first-principles study of nitrogen- and boron-assisted platinum adsorption on carbon nanotubes

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 × 1012 cm−2 at the Al2O3/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

https://chppe.osu.edu/sites/chppe.osu.edu/files/uploads/Publications3/Electrical%20properties%20of%20atomic%20layer%20deposited%20aluminum%20oxide%20on%20gallium%20nitride.pdf

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

We demonstrate an efficient approach to engineer the dielectric/AlGaN positive interface fixed charges by oxygen plasma and post-metallization anneal. Significant suppression of interface fixed charges from 2 × 1013 to 8 × 1012 cm-2 was observed. Experimental and theoretical electron mobility characteristics and the impact of remote impurity scattering were investigated. The reduction in oxide/semiconductor interface charge density leads to an increase of electron mobility, and enables a positive threshold voltage.

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

Interface charges at atomic layer deposited Al2O3/III-nitride interfaces were investigated for III-nitride layers of different polarity. A large positive sheet charge density is induced at the Al2O3/III-nitride interface on all the orientations of GaN and Ga-polar AlGaN, and this sheet charge can be significantly altered using post-metallization anneals. It is proposed that the charges are caused by interfacial defects that can be passivated and neutralized through a H2 based anneal. Tailoring of the interface charge density described here can be used to improve critical device characteristics such as gate leakage and electron transport, and for lateral electrostatic engineering.

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, and AlGaN thickness. Remote impurity scattering was found to be the dominant mechanism when the 2DEG density is below 5 × 1012 cm−2 and dielectric/AlGaN interface charge density is above 5 × 1012 cm−2. The interfacial charge has significant effect on the mobility as the AlGaN cap layer thickness is scaled down below 5 nm.

Ting-Hsiang Hung

Papers

A first-principles study of nitrogen- and boron-assisted platinum adsorption on carbon nanotubes

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors