T
Tong Hui
Researcher at Chinese Academy of Sciences
Publications - 17
Citations - 296
Tong Hui is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Solar cell & Passivation. The author has an hindex of 7, co-authored 17 publications receiving 197 citations.
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Journal ArticleDOI
Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells
Zhang Zhi,Yuheng Zeng,Chun-Sheng Jiang,Yuqing Huang,Mingdun Liao,Tong Hui,Mowafak Al-Jassim,Pingqi Gao,Chunhui Shou,Xiaoling Zhou,Baojie Yan,Jichun Ye +11 more
TL;DR: In this paper, the carrier transport through the silicon-oxide (SiOx) layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells has been studied experimentally and by simulation.
Journal ArticleDOI
Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells
Yuheng Zeng,Tong Hui,Cheng Quan,Cheng Quan,Cai Liang,Zhenhai Yang,Kangmin Chen,Zhizhong Yuan,Chung-Han Wu,Baojie Yan,Pingqi Gao,Jichun Ye +11 more
TL;DR: In this paper, the authors used the numerical simulation method to study the tunnel oxide passivated carrier-selective contacts (TOPCon) structured solar cells, with the focus especially on the paths towards excellent surface passivation and low contact resistance.
Journal ArticleDOI
Dual Functional Electron-Selective Contacts Based on Silicon Oxide/Magnesium: Tailoring Heterointerface Band Structures while Maintaining Surface Passivation
Tong Hui,Zhenhai Yang,Xixi Wang,Xixi Wang,Zhaolang Liu,Zhenxin Chen,Xiaoxing Ke,Manling Sui,Jiang Tang,Tianbao Yu,Ziyi Ge,Yuheng Zeng,Pingqi Gao,Jichun Ye +13 more
Journal ArticleDOI
A strong-oxidizing mixed acid derived high-quality silicon oxide tunneling layer for polysilicon passivated contact silicon solar cell
Tong Hui,Mingdun Liao,Zhang Zhi,Zhang Zhi,Yimao Wan,Dan Wang,Cheng Quan,Cai Liang,Pingqi Gao,Wei Guo,Hao Lin,Hao Lin,Chunhui Shou,Yuheng Zeng,Baojie Yan,Jichun Ye +15 more
TL;DR: In this article, the authors developed a new wet-chemical method to grow the high-quality tunnel silicon oxide (SiOx) layer by using a strong-oxidizing mixed acid, which consists of three volumes of HNO3 (68wt%) and one volume of H2SO4 (98wt%), named as the CNS (concentrated nitric and sulfuric) acid for short.
Journal ArticleDOI
Principles of dopant-free electron-selective contacts based on tunnel oxide/low work-function metal stacks and their applications in heterojunction solar cells
Zhenhai Yang,Pingqi Gao,Jiang Sheng,Tong Hui,Cheng Quan,Xi Yang,Kuan W.A. Chee,Baojie Yan,Yuheng Zeng,Jichun Ye +9 more
TL;DR: In this article, a fully dopant-free c-Si-based heterojunction solar cells (HSCs) with a SiOx/low-WFM electron selective contact and a MoOx hole-selective contact was proposed, yielding a power conversion efficiency of 21.8%.