An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Light emitting device and method of manufacturing the same

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

A method of manufacturing a semiconductor device including a thin film transistor, said method comprising the steps of forming an amorphous semiconductor film (904) on an insulating surface (902); providing a material being capable of promoting the crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; crystallizing the amorphous semiconductor film by heating to form a crystalline semiconductor film; forming a gate insulating film in contact with the crystalline semiconductor film; forming a gate electrode adjacent to the crystalline semiconductor film with the gate insulating film therebetween; providing an impurity into the crystalline semiconductor film to a source region, a drain channel and a channel region between the source and drain regions of the thin film transistor. 
The crystallization promoting material is one of Ni, Fe, Co, or Pt, and can be applied to the amorphous semiconductor film by using a spin-coated solution (907).

Method of improving the crystallization of semiconductor films particularly for thin film transistors

Verfahren zur Herstellung von einem Halbleiterbauelement

A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Active matrix light-emitting device with overlapping electroluminescent layers

An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×10 21 /cm 3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH 4 HF 2 ) of 7.13% and an ammonium fluoride (NH 4 F) of 15.4%.

Thin film semiconductor device having silicon nitride film

PROBLEM TO BE SOLVED: To provide a light-emitting device of high definition.SOLUTION: A light-emitting device comprises: a first substrate provided with an insulator region covering one edge of a first electrode 11 and one edge of a second electrode 12, a first light-emitting layer 17 formed on the first electrode 11 and the insulator region, and a second light-emitting layer 18 formed on the second electrode 12 and the insulator region; and a second substrate facing the first substrate and provided with a color filter. The first light-emitting layer and the second light-emitting layer overlap with each other on the insulator region and the first electrode. The color filter includes: a first coloring layer 31b provided to face the first light-emitting layer 17; a second coloring layer 31c; a light-shielding part 31a provided between the first coloring layer 31b and the second coloring layer 31c to face a region on which the first light-emitting layer 17 and the second light-emitting layer 18 overlap with each other on the insulator region and the first electrode 11.

Toru Takayama

Papers

Method of improving the crystallization of semiconductor films particularly for thin film transistors

Verfahren zur Herstellung von einem Halbleiterbauelement

Active matrix light-emitting device with overlapping electroluminescent layers

Thin film semiconductor device having silicon nitride film

Light-emitting device, module and electronic equipment