An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Light emitting device and method of manufacturing the same

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

The object of the present invention is a technique for forming the high quality and dense insulation film on a glass substrate as the gate insulation film or protection film under the temperature below the strain point, which can realize the semiconductor device with good performance and high reliability The semiconductor device according to the present invention is to form a SiN film with SiO film on the crystalline semiconductor film in the gate insulation film with the field effect transistors in channel length of 035 to 25 mum The SiN film contains hydrogen in concentration below 1x10 /cm , oxygen in concentration between 5x10 to 5x10 /cm , and has the characteristic for etching speed below 10 nm/min in the mixed aqueous solution containing NH4HF2 in 713% and NH4F in 154%

SiN film, semiconductor device, and the manufacturing method thereof

An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×10 21 /cm 3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH 4 HF 2 ) of 7.13% and an ammonium fluoride (NH 4 F) of 15.4%.

Silicon nitride film and semiconductor device

PROBLEM TO BE SOLVED: To prevent needless discharge such as arc discharge as the facility of increasing a device scale and of working are maintained and to reduce the amt. of particles or the life caused by the peeling of coating stuck to a reaction chamber by generating plasma in a space surrounded by an electrode, a substrate holder and an insulator. SOLUTION: Since a plasma space 115 generated by an electrode 111 is made into a state surrounded by the electrode 111, a substrate holder 112 and an insulator 120 composed of alumina, the state that the plasma space 115 spreads from the space between the electrode 111 and the substrate holder 112 does not occur owing to the insulator 120, so that the generation of arc discharge or the like between the electrode 111 and a reaction chamber 104 can be prevented. Since the plasma space 115 does not spread, the density of plasma increases to improve the coating forming rate. Moreover, coating is formed mainly on the surfaces of the electrode 111 and the insulator 120 at the time of coating formation, but, since the surface of the insulator 120 has ruggedness, the formed coating has adhesion tighter than that of metal, so that the amt. of the coating to be fallen as particles or flakes can be reduced.

Plasma cvd device

A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.

Transistor, semiconductor circuit, and method of forming the same

PURPOSE: To improve the crystallizability of source and drain regions turned into amorphous by a method wherein a trace catalyst material is added to an amorphous silicon film to accelerate the crystallization of the silicon film, the crystallizing temperature of the silicon film is reduced and the crystallizing time of the silicon film is shortened. CONSTITUTION: A crystalline silicon active layer on an insulating surface layer 101 is constituted of a lightly doped impurity region 106 between a channel formation region 104 and source and drain regions 105 and 108 and a lightly doped region 107 between the source and drain regions 105 and 108 and the region 104. A gate insulating film 102 and a gate electrode 103 are formed on the active layer. An interlayer insulator film 109 is provided in such a way as to cover the electrode 103. Electrodes 110 and 111, which are respectively provided on the regions 105 and 108, are respectively formed in contact holes formed in the interlayer insulator film 109. A catalyst element is mainly introduced into the regions 105 and 108 and the concentration of the element is set at 1×10 7 atom/cm 2 or higher. Thereby, a crystallization of the regions 105 and 108 is accelerated and the crystallizability of the source and drain regions turned into amorphous is improved. COPYRIGHT: (C)1996,JPO

Toru Takayama

Papers

SiN film, semiconductor device, and the manufacturing method thereof

Silicon nitride film and semiconductor device

Plasma cvd device

Transistor, semiconductor circuit, and method of forming the same

Thin film transistor and its formation