A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Resist composition and patterning process

In the lithographic multilayer resist process, a material comprising a copolymer of a hydroxy-containing vinylnaphthalene with hydroxy-free olefins is useful in forming a resist undercoat. The undercoat-forming material has a high transparency and optimum values of n and k so that it functions as an antireflective coating during short-wavelength exposure, and has etching resistance during substrate processing by etching.

Photoresist undercoat-forming material and patterning process

A resist composition comprising at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group and an ammonium salt compound having a sulfonic acid ester group; and a pattern forming method using the composition.

Resist composition and pattern forming method using the same

A resist composition used in a method of forming a resist pattern including applying a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component to a substrate to form a resist film; subjecting the resist film to exposure; baking after subjecting the resist film to exposure, wherein at an exposed portion of the resist film, the base generated from the photo-base generator component upon exposure and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of acid provided to the resist film in advance; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

Resist composition and method of forming resist pattern

A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C2-C20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process

There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography which comprises, at least, a polymer having a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition which shows an antireflection effect against an exposure light by combining with an intermediate resist layer having an antireflection effect if necessary, has a higher etching resistance during etching a substrate than polyhydroxy styrene, cresol novolac resin, etc., has a high poisoning-resistant effect, and is suitable for using in a multilayer-resist process like a bilayer resist process or a trilayer resist process.

Bottom resist layer composition and patterning process using the same

A method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, includes a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. A method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.

Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film

There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.

Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process

Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a):
 
R 1 CF 2 SO 3 − (R 2 ) 4 N +   (1a),
 
as well as a resist lower layer substrate comprising a resist lower layer formed using said material.

Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern

PROBLEM TO BE SOLVED: To provide a method for forming a resist underlayer film to form a resist underlayer film, having a lowered reflectance, a high etching resistance, and high heat and solvent resistances, in particular, without wiggling during substrate etching, and to provide a patterning process that uses the film. SOLUTION: The method for forming the resist underlayer film 3 of a multilayer resist film having at least three layers used in lithography includes, at least a step of coating a resist underlayer film material containing a novolak resin obtained by treating a compound having a bisnaphthol group on a substrate 1, and a step of curing the coated resist underlayer film material by a heat treatment, at a temperature >300 to 600°C for 10-600 s. COPYRIGHT: (C)2010,JPO&INPIT

Toshihiko Fujii

Papers

Bottom resist layer composition and patterning process using the same

Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film

Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process

Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern

Method for forming resist underlayer film, patterning process using the same, and resist underlayer film material