Patent
Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film
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TLDR
In this paper, a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, includes a step of coating a composition for resist under-layer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a stepof curing the coated composition for the resist under layer film by a heat treatment at a temperature above 300° C and 600° C. or lower for 10 to 600 seconds.Abstract:
A method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, includes a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. A method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.read more
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Resist underlayer film composition and patterning process using the same
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References
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Yuji Harada,Jun Hatakeyama,Yoshio Kawai,Masaru Sasago,Masayuki Endo,Kazuhiko Maeda,Haruhiko Komoriya,Michitaka Ootani +7 more
TL;DR: In this article, a polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is used as an additive to a photoresist composition for immersion lithography.
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