T
Toshimitsu Mochizuki
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 69
Citations - 687
Toshimitsu Mochizuki is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Solar cell & Terahertz radiation. The author has an hindex of 14, co-authored 64 publications receiving 555 citations. Previous affiliations of Toshimitsu Mochizuki include University of Tokyo.
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Journal ArticleDOI
Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements.
Shaoqiang Chen,Lin Zhu,Masahiro Yoshita,Toshimitsu Mochizuki,Changsu Kim,Hidefumi Akiyama,Mitsuru Imaizumi,Yoshihiko Kanemitsu +7 more
TL;DR: This work proposes a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements.
Journal ArticleDOI
Conversion efficiency limits and bandgap designs for multi-junction solar cells with internal radiative efficiencies below unity.
Lin Zhu,Toshimitsu Mochizuki,Masahiro Yoshita,Shaoqiang Chen,Changsu Kim,Hidefumi Akiyama,Yoshihiko Kanemitsu +6 more
TL;DR: This work calculated the conversion-efficiency limit ηsc and the optimized subcell bandgap energies of 1 to 5 junction solar cells without and with intermediate reflectors under 1-sun AM1.5D irradiations, and obtained characteristic optimized band gap energies, which reflect both ηint* decrease and AM2.5 spectral gaps.
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High-efficiency III–V//Si tandem solar cells enabled by the Pd nanoparticle array-mediated “smart stack” approach
Hidenori Mizuno,Kikuo Makita,Takeshi Tayagaki,Toshimitsu Mochizuki,Takeyoshi Sugaya,Hidetaka Takato +5 more
TL;DR: In this paper, a triple-junction cell consisting of InGaP/GaAs and crystalline Si subcells was demonstrated, and the promising efficiency of 25.1% was achieved.
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Probing the surface potential of oxidized silicon by assessing terahertz emission
Toshimitsu Mochizuki,Akira Ito,J. Mitchell,Hidetoshi Nakanishi,Katsuto Tanahashi,Iwao Kawayama,Masayoshi Tonouchi,Katsuhiko Shirasawa,Hidetaka Takato +8 more
TL;DR: Using laser terahertz (THz) emission from silicon wafers with silicon-oxide passivation layers, revealing a strong correlation between the THz waveform and the surface potential as mentioned in this paper.
Journal ArticleDOI
Subcycle Optical Response Caused by a Terahertz Dressed State with Phase-Locked Wave Functions.
K. Uchida,Tomohito Otobe,Toshimitsu Mochizuki,C. Kim,Masahiro Yoshita,Hidefumi Akiyama,Loren Pfeiffer,Ken W. West,Koichiro Tanaka,Hideki Hirori,Hideki Hirori +10 more
TL;DR: The authors observed optical absorption strengths modulated on a subcycle time scale in a GaAs quantum well in the presence of a multicycle terahertz driving pulse using a near-infrared probe pulse, which indicates that the output probe intensity was coherently reshaped by the excitonic sideband emissions.