https://pubs.rsc.org/en/content/articlepdf/2019/NP/C8NP00092A

Marine natural products.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

(2002). The Effects of Harmful Algal Blooms on Aquatic Organisms. Reviews in Fisheries Science: Vol. 10, No. 2, pp. 113-390.

The Effects of Harmful Algal Blooms on Aquatic Organisms

We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1. When carrier concentration was increased to 4×1018cm−3, the conduction mechanism changed to degenerate conduction and room-temperature Hall mobility was steeply increased to >10cm2(Vs)−1, showing metal–insulator transition behavior. These results are explained by percolation conduction over distribution of potential barriers formed around conduction band edge. The potential distribution is a consequence of potential modulation originating from random distribution of Ga3+ and Zn2+ ions in the crystal structure of InGaO3(ZnO)5.

Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

Mesopore-modified zeolites: preparation, characterization, and applications.

We report a remarkable difference of decomposed structures on the Si(0001) and C(0001) faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 °C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces.

A formation mechanism of carbon nanotube films on SiC(0001)

A film of well-oriented carbon nanotubes was produced by sublimation decomposition of silicon carbide at 1700 °C by using YAG laser heating in a transmission electron microscope (TEM). The processes of SiC decomposition and the formation of carbon nanotubes were observed successively by high-resolution electron microscopy (HREM). Carbon nanotubes were mostly oriented along the [111] direction on the (111) surface plane of β-SiC single crystal. The interface between them was observed by HREM.

Epitaxial carbon nanotube film self-organized by sublimation decomposition of silicon carbide

Single-crystalline thin films of the homologous series InGaO3(ZnO)m (where m is an integer) are fabricated by the reactive solid-phase epitaxy (R-SPE) method. Specifically, the role of ZnO as epitaxial initiator layer for the growth mechanism is clarified. High-temperature annealing of bilayer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on yttria-stabilized zirconia (YSZ) substrate allows for the growth of single-crystalline film with controlled chemical composition. The epitaxial ZnO thin layer plays an essential role in determining the crystallographic orientation, while the ratio of the thickness of both layers controls the film composition.

Toshiyuki Suzuki

Papers

A formation mechanism of carbon nanotube films on SiC(0001)

Epitaxial carbon nanotube film self-organized by sublimation decomposition of silicon carbide

Single‐Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid‐Phase Epitaxy

Complex toxin profiles in phytoplankton and Greenshell mussels (Perna canaliculus), revealed by LC-MS/MS analysis

Pectenotoxin-2 seco acid: a toxin converted from pectenotoxin-2 by the New Zealand Greenshell mussel, Perna canaliculus