The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Electronics based on two-dimensional materials

Brownian motors: noisy transport far from equilibrium

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

In systems possessing spatial or dynamical symmetry breaking, Brownian motion combined with unbiased external input signals, deterministic and random alike, can assist directed motion of particles at submicron scales. In such cases, one speaks of ``Brownian motors.'' In this review the constructive role of Brownian motion is exemplified for various physical and technological setups, which are inspired by the cellular molecular machinery: the working principles and characteristics of stylized devices are discussed to show how fluctuations, either thermal or extrinsic, can be used to control diffusive particle transport. Recent experimental demonstrations of this concept are surveyed with particular attention to transport in artificial, i.e., nonbiological, nanopores, lithographic tracks, and optical traps, where single-particle currents were first measured. Much emphasis is given to two- and three-dimensional devices containing many interacting particles of one or more species; for this class of artificial motors, noise rectification results also from the interplay of particle Brownian motion and geometric constraints. Recently, selective control and optimization of the transport of interacting colloidal particles and magnetic vortices have been successfully achieved, thus leading to the new generation of microfluidic and superconducting devices presented here. The field has recently been enriched with impressive experimental achievements in building artificial Brownian motor devices that even operate within the quantum domain by harvesting quantum Brownian motion. Sundry akin topics include activities aimed at noise-assisted shuttling other degrees of freedom such as charge, spin, or even heat and the assembly of chemical synthetic molecular motors. This review ends with a perspective for future pathways and potential new applications.

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Artificial Brownian motors: Controlling transport on the nanoscale

https://www.physik.uni-augsburg.de/theo1/hanggi/Papers/213.pdf

Driven quantum tunneling

Systems, methods, and apparatuses for implementing die recovery in Two-Level Memory (2LM) stacked die subsystems are described. A stacked semiconductor package includes a processor functional silicon die at a first layer of the stacked semiconductor package; one or more memory dies forming a corresponding one or more memory layers of the stacked semiconductor package; a plurality of Through Silicon Vias (TSV s) formed through the one or more memory dies; a plurality of physical memory interfaces electrically interfacing the one or more memory dies to the processor functional silicon die at the first layer through the memory layers via the plurality of TSVs; and a redundant physical memory interface formed by a redundant TSV traversing through the memory layers to the processor functional silicon die at the first layer through which to reroute a memory signal path from a defective physical memory interface at a defective TSV to a functional signal path traversing the redundant TSV.

Systems, methods, and apparatuses for implementing die recovery in two-level memory (2LM) stacked die subsystems

We report a new integrated circuit for multiplexing and demultiplexing at rates of 100 Gb/s. In transistor multiplexer/demultiplexer circuits, the operating data rate is limited by transistor bandwidth. The demonstrated circuit, which uses terahertz Schottky diodes, readily attains the necessary bandwidths. The IC, based in the diode nonlinear-transmission line (NLTL) technology, consists of an array of four sample-hold gates driven by NLTL strobe generators. To permit use in multiplexing, the sample-hold gates use a six-diode configuration with 150 GHz output bandwidth. Initial measurements with simple data patterns at 104 Gb/s are demonstrated.

Multiplexer/demultiplexer IC technology for 100 Gb/s fiber-optic transmission

A method for bi-directional data synchronization between different clock frequencies is described wherein a state machine counter is provided a first clock signal having a first frequency. The state machine counter is then provided a second clock signal having a second frequency that is an integer multiple of the first clock frequency. The state machine counter has an integer number of states equivalent to the ratio of the second clock signal frequency to the first clock signal frequency. The first clock signal is applied to reset the state machine counter to an initial state. The state machine counter generates an intermediate clock signal whenever the state machine increments through all states to return to the initial state. The intermediate clock is then applied to synchronize data between the first clock frequency and the second clock frequency.

Method for bi-directional data synchronization between different clock frequencies

Schottky varactor diodes with 4 THz cutoff frequencies were fabricated using 1 /spl mu/m lithography and self-aligned RIE sidewall etching. A novel microwave characterization technique was used to determine the diode cutoff frequency. Using these devices, subpicosecond pulse generators integrated with 515 GHz bandwidth sampling circuits were fabricated. >

4 THz sidewall-etched varactors for sub-mm-wave sampling circuits

Quantum transport in resonant tunneling diodes, sequential resonant tunneling superlattices and miniband superlattices in the presence of intense terahertz electric fields is marked by new channels opened by the absorption or emission of one or more terahertz photons. In triple barrier resonant tunneling diodes, new transport channels supported by the absorption or stimulated emission of up to three terahertz photons are observed. In sequential resonant tunneling superlattices, dynamic localization is accompanied by absolute negative resistance. Transport in miniband resonances with controlled by coherent tunneling through several barriers and quantum wells, reveals multi-photon resonances with Bloch oscillation. Photon-assisted transport in these semiconductor quantum structures bears a strong analogy to quasi-particle tunneling and the AC Josephson effect in superconducting junctions and opens the arena of superconducting electronics to semiconductor systems. These experiments are made possible by the UCSB free-electron lasers that deliver kilowatts of tunable radiation from 120 GHz to 4.8 THz.

Uddalak Bhattacharya

Papers

Systems, methods, and apparatuses for implementing die recovery in two-level memory (2LM) stacked die subsystems

Multiplexer/demultiplexer IC technology for 100 Gb/s fiber-optic transmission

Method for bi-directional data synchronization between different clock frequencies

4 THz sidewall-etched varactors for sub-mm-wave sampling circuits

Photon assisted transport through semiconductor quantum structures in intense terahertz electric fields